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Du, Hongchu
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Waser, Rainer
Journal Article
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Du, Hongchu
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1
Journal Article
Nanosized Conducting Filaments Formed by Atomic-Scale Defects in Redox-Based Resistive Switching Memories
Du, Hongchu
2017
Chemistry of materials, 29 (2017) 7, S. 3164–3173
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2
Journal Article
Nanoionic Resistive Switching Memories: On the Physical Nature of the Dynamic Reset Process
Marchewka, Astrid
2016
Advanced Electronic Materials, 2 (2016) 1, S. n/a - n/a
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3
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Spectromicroscopic insights for rational design of redox-based memristive devices
Baeumer, Christoph
2015
Nature Communications, 6 (2015) S. 8610 -
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4
Journal Article
Avalanche-Discharge-Induced Electrical Forming in Tantalum Oxide-Based Metal-Insulator-Metal Structures
Skaja, Katharina
2015
Advanced functional materials, 25 (2015) 46, S. 7154–7162
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5
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Do dislocations act as atomic autobahns for oxygen in the perovskite oxide SrTiO$_{3}$?
Metlenko, Veronika
2014
Nanoscale, 6 (2014) 21, S. 12864 - 12876
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Du, Hongchu
Waser, Rainer
Dittmann, Regina
4
Jia, Chun-Lin
4
Mayer, Joachim
4
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De Souza, Roger A.
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Feyer, Vitaliy
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Menzel, Stephan
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Ramadan, Amr H. H.
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Schmitz, Christoph
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Arndt, Benedikt
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Baeumer, Christoph
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Barthel, Juri
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Bornhöfft, Manuel
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Bäumer, Christoph
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Gunkel, Felix
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Hoffmann-Eifert, Susanne
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Koehl, Annemarie
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Marchewka, Astrid
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Metlenko, Veronika
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Michael Schneider, Claus
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Moors, Marco
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Müller, Philipp
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Peters, Oliver
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Rana, Vikas
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Roesgen, Bernd
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Controlling Electron Charge-Based Phenomena
2
Controlling Collective States
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Controlling Configuration-Based Phenomena
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Exploratory materials and phenomena
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Contributing Institute
Elektronische Materialien; PGI-7
4
Mikrostrukturforschung; PGI-5
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Elektronische Eigenschaften; PGI-6
2
JARA-FIT; JARA-FIT
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Materialwissenschaft u. Werkstofftechnik; ER-C-2
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