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1

Comparison of plasma-enhanced and thermal atomic layer deposited TiO2 for the integration into HfO2/TiO2-based resistive switching devices

Hardtdegen, Alexander
2017

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”

2

Conference Presentation

Tuning the Switching Behavior of Nano-Crossbar Reram Devices By Design and Process Treatment of ALD Functional Oxide Layer Stacks

Hoffmann-Eifert, Susanne
2017

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”

3

Journal Article

Multidimensional Simulation of Threshold Switching in NbO$_{2}$ Based on an Electric Field Triggered Thermal Runaway Model

Funck, Carsten
2016

Advanced electronic materials, 2 (2016) 7, S. 1600169 -

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”

4

Conference Presentation

Internal Cell Resistance as the Origin of Abrupt Reset Behavior in HfO2-Based Devices Determined from Current Compliance Series

Hardtdegen, Alexander
2016

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”

5

Comparison of the Resistance Switching Behavior of Ex-situ and In-situ STO Thin Films grown by Atomic Layer Deposition

Zhang, Hehe
2015

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”

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