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Hardtdegen, Hilde
Center of Nanoelectronic Systems for Information Technology; CNI
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
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Hardtdegen, Hilde
Center of Nanoelectronic Systems for Information Technology; CNI
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
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Conference Presentation
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1
Poster
MOVPE GaN Growth: Determination of Activation Energy using In-Situ Reflectometry
Kaluza, N.
2004
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Benefits of optical in-situ measurements for the MOVPE of compound semiconductor layers and device structures
Hardtdegen, H.
2004
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Optimization of nitride growth in single wafer horizontal MOVPE reactors for HEMTs
Kaluza, N.
2004
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Einfluss von N2 als Trägergas für GaN Wachstum im invertierten Einlass
Steins, R.
2004
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Luminescence Properties of Si-doped MOVPE n-GaN
Thillosen, N.
2004
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Uniform III-nitride growth in single wafer horizontal MOVPE reactors
Hardtdegen, H.
2004
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6
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Conference Presentation
3
Poster
2
Contribution to a book
1
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1
Name
Hardtdegen, Hilde
Kaluza, N.
5
Steins, R.
5
Alam, A.
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Beccard, R.
2
Javorka, P.
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Schmitt, T.
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Bernat, P. F.
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Cho, Y. S.
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Lüth, H.
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Marso, M.
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Thillosen, N.
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Wirtz, K.
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Zettler, J.-T.
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von der Ahe, M.
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Research Program
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
Contributing Institute
Center of Nanoelectronic Systems for Information Technology; CNI
Institut für Halbleiterschichten und Bauelemente; ISG-1
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