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Heeg, T. AND Schlom, D. G.

Institut für Halbleiterschichten und Bauelemente; ISG-1

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Heeg, T. AND Schlom, D. G.

Institut für Halbleiterschichten und Bauelemente; ISG-1

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Poster 4 Journal Article 3 Conference Presentation 1

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Journal Article

Band alignment between (100) Si and amorphous LaAlO3,LaScO3, and Sc2O3: Atomically abrupt versus interlayer-containing interfaces

Afanas'ev, V. V.
2006

Applied physics letters, 88 (2006) S. 032104

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Journal Article

Growth and properties of epitaxial rare-earth scandate thin films

Heeg, T.
2006

Applied physics / A, 83 (2006) S. 103 - 106

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Journal Article

Amorphous lanthanum lutetium oxide thin films as an alternative high-k gate dielectric

Lopes, J. M. J.
2006

Applied physics letters, 89 (2006) S. 222902

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Conference Presentation

Epitaxial Lanthanum Lutetium oxide thin films prepared by pulsed laser deposition

Schubert, J.
2006

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Lanthanum Lutetium oxide thin films as a possible alternative gate dielectric

Schubert, J.
2006

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Rare earth based oxides as alternative gate dielectrics

Roeckerath, M.
2006

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Influence of strain and cation order on the electrical and magnetic properties of La1 xSrxMnO3 thin films

Adamo, C.
2006

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Structural and Dielectric Properties of LuScO3 and LaLuO3 Thin Films

Heeg, T.
2006

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Publications database 8 Open Access 2

Poster 4 Journal Article 3 Conference Presentation 1

Heeg, T. Schlom, D. G. Schubert, Jürgen 7 Jia, Y. 5 Roeckerath, M. 4 Afanas'ev, V. V. 3 more ... Lopes, J. M. J. 3 Stesmans, A. 3 Adamo, C. 2 Brooks, C. 2 Chen, H. Y. 2 Jia, C. L. 2 Mantl, S. 2 Tian, W. 2 Buchal, C. 1 Buchal, Ch. 1 Cicerrella, E. 1 Edge, L. 1 Edge, L. F. 1 Freeouf, J. L. 1 Lenk, Steffi 1 Li, Q. 1 Littmark, U. 1 Maritato, L. 1 Rije, E. 1 Scarfato, A. 1 Schmehl, A. 1 Shamuilia, S. 1 Trithaveesak, O. 1 Wagner, M. 1 see all ... less ...

Grundlagen für zukünftige Informationstechnologien 8

Center of Nanoelectronic Systems for Information Technology; CNI 8 Institut für Halbleiterschichten und Bauelemente; ISG-1 JARA-FIT; JARA-FIT 1

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