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Hoffmann-Eifert, Susanne
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Hardtdegen, Alexander
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Hoffmann-Eifert, Susanne
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Conference Presentation
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Journal Article
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1
Conference Presentation
Tuning the Switching Behavior of Nano-Crossbar Reram Devices By Design and Process Treatment of ALD Functional Oxide Layer Stacks
Hoffmann-Eifert, Susanne
2017
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2
Poster
Comparison of plasma-enhanced and thermal atomic layer deposited TiO2 for the integration into HfO2/TiO2-based resistive switching devices
Hardtdegen, Alexander
2017
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Zhang
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3
Journal Article
Multidimensional Simulation of Threshold Switching in NbO$_{2}$ Based on an Electric Field Triggered Thermal Runaway Model
Funck, Carsten
2016
Advanced electronic materials, 2 (2016) 7, S. 1600169 -
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Conference Presentation
Internal Cell Resistance as the Origin of Abrupt Reset Behavior in HfO2-Based Devices Determined from Current Compliance Series
Hardtdegen, Alexander
2016
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Poster
Comparison of the Resistance Switching Behavior of Ex-situ and In-situ STO Thin Films grown by Atomic Layer Deposition
Zhang
,
Hehe
2015
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5
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Conference Presentation
2
Poster
2
Journal Article
1
Name
Hardtdegen, Alexander
Hoffmann-Eifert, Susanne
Zhang, Hehe
5
Menzel, Stephan
4
Funck, Carsten
3
Waser, Rainer
2
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Aslam, Nabeel
1
Hwang, C. S.
1
La Torre, Camilla
1
Lee, W.
1
Rana, Vikas
1
Waser, R.
1
Wouters, D.
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Xu, Chengcheng
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Controlling Collective States
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Controlling Electron Charge-Based Phenomena
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Elektronische Materialien; PGI-7
5
JARA Institut Green IT; PGI-10
4
JARA-FIT; JARA-FIT
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Scientific Report
2017
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2015
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2016
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2018
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