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Knoll, Lars
Analytik; ZEA-3
Journal Article
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Knoll, Lars
Analytik; ZEA-3
Journal Article
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Journal Article
Homogeneous NiSi1−xGex layer formation on strained SiGe with ultrathin Ni layers
Liu, Linjie
2015
Microelectronic engineering, 139 (2015) S. 26 - 30
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Journal Article
Reduction of silicon dioxide interfacial layer to 4.6 A EOT by Al remote scavenging in high K/metal gate stacks on Si
Nichau, Alexander
2013
Microelectronic engineering, 109 S. 109 - 112
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Breuer, Uwe
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Knoll, Lars
Mantl, Siegfried
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Buca, Dan Mihai
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Di, Zengfeng
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Controlling Electron Charge-Based Phenomena
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Frontiers of charge based Electronics
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Peter Grünberg-Centre (PG-C)
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Analytik; ZEA-3
Halbleiter-Nanoelektronik; PGI-9
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Mikrostrukturforschung; PGI-5
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