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Kordos, P.
AND
Lüth, H.
Institut für Halbleiterschichten und Bauelemente; ISG-1
Journal Article
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
2002
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Kordos, P.
AND
Lüth, H.
Institut für Halbleiterschichten und Bauelemente; ISG-1
Journal Article
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
2002
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1
Journal Article
Growth and characterisation of AlGaN/GaN/HEMT on silicon substrates
Kalisch, H.
2002
Physica status solidi / A, 194 (2002) S. 464 - 467
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2
Journal Article
Photoionization spectroscopy of traps in doped and undoped AlGaN/GaN HEMTs
Wolter, M.
2002
Physica status solidi / C (2002) S. 82 - 85
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3
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Investigation of AlGaN/GaN HEMTs on Si substrate using backgating
Marso, A.
2002
Physica status solidi / C (2002) S. 65 - 68
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4
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Submicrometer scale photoassisted wet etching of n-doped gallium nitride
Skriniarova, J.
2002
Journal of electrical engineering, 53 (2002) S. 105 - 107
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5
Journal Article
Top contact for vertical double-gate MOSFETs
Moers, J.
2002
Microelectronic engineering, 64 (2002) S. 465 - 471
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6
Journal Article
AlGaN/GaN HEMTs on (111) silicon substrates
Javorka, P.
2002
IEEE Electron Device Letters, 23 (2002) S. 4 - 6
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Kordos, P.
Lüth, H.
Alam, A.
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Marso, M.
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Gerstenbrandt, G.
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Research Program
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
Contributing Institute
Institut für Halbleiterschichten und Bauelemente; ISG-1
Scientific Report
2002
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