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Lengeler, B.
Halbleiter-Nanoelektronik; IBN-1
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Lengeler, B.
Halbleiter-Nanoelektronik; IBN-1
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Journal Article
Low- and high-field transport properties of pseudomorphic InxGa1-xAs/lnP (0.73 kleiner gleich x kleiner gleich 0.82) p-type modulation-doped single-quantum-well structures
Lüth, H.
Journal of applied physics, 75 (1994) 7, S. 3507 - 3515
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Journal Article
Optimization of modulation-doped Ga1-xInxAs/lnP heterostructures towards extremely high mobilities
Jäger, W.
Journal of applied physics, 73 (1993) 9, S. 4489 - 4493
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Journal Article
Optimization of modulation-doped Ga1- xInxAs/lnP heterostructures towards extremely high mobilities
Jäger, W.
Journal of applied physics, 73 (1993) 9, S. 4489 - 4493
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Journal Article
Gas source molecular beam epitaxy of FeSi2/Si(l 11) heterostructures
Gerthsen, D.
Applied physics letters, 62 (1992) 18, S. 2271 - 2273
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Lengeler, B.
Lüth, H.
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Schäpers, Thomas
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Appenzeller, J.
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Dieker, Ch.
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Hardtdegen, H.
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Hollfelder, M.
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Jäger, W.
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Klocke, Th.
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Loken-Larsen, H.
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Meyer, R.
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Gerthsen, D.
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Heime, K.
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Kohl, A.
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Lülth, H.
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Contributing Institute
Halbleiter-Nanoelektronik; IBN-1
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