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Luysberg, Martina
JARA-FIT; JARA-FIT
AND
Zentralabteilung für Chemische Analysen; ZCH
Grundlagen für zukünftige Informationstechnologien
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Luysberg, Martina
JARA-FIT; JARA-FIT
AND
Zentralabteilung für Chemische Analysen; ZCH
Grundlagen für zukünftige Informationstechnologien
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1
Journal Article
LaLuO3 higher-k dielectric integration in SOI MOSFETs with a gate-first process
Nichau, A.
2012
Solid state electronics, 71 (2012) S. 19 - 24
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2
Contribution to a book
Electrical and structural properties of ternary rare-earth oxides on Si and higher mobility substrates and their integration as high-k gate dielectrics in MOSFET devices
Lopes, J.M.J.
2011
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Lanthanum Lutetium oxide integration in a gate-first process on SOI MOSFETs
Nichau, A.
2011
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4
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Amorphous ternary rare-earth gate oxides for future integration in MOSFETs
Lopes, J. M. J.
2009
Microelectronic engineering, 86 (2009)
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5
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Alternative ternary gate-dielectrics on germanium substrates
Schubert, J.
2009
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6
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Amorphous ternary rare-earth gate oxides for future integration in MOSFETs
Roeckerath, M.
2009
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Research Program
Grundlagen für zukünftige Informationstechnologien
Contributing Institute
JARA-FIT; JARA-FIT
Zentralabteilung für Chemische Analysen; ZCH
Halbleiter-Nanoelektronik; IBN-1
3
Halbleiter-Nanoelektronik; PGI-9
3
Mikrostrukturforschung; IFF-8
3
Mikrostrukturforschung; PGI-5
3
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