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Müller, M.
Halbleiter-Nanoelektronik; IBN-1
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Müller, M.
Halbleiter-Nanoelektronik; IBN-1
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1
Talk (non-conference)
Schottky Barrier Height tuning using Sb Segregation
Urban, C.
2009
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2
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Schottky-barrier height tuning og Ni and Pt germanide/n-Ge contacts using dopant segregation
Müller, M.
2009
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3
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Schottky barrier height modulation by arsenic dopant segregation
Urban, C.
2008
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4
Talk (non-conference)
Schottky barrier height engineering of NiSi/Si contacts by dopant segregation
Urban, C.
2008
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5
Talk (non-conference)
Dopant and Sulfur Segregated Schottky Barrier MOSFETs
Zhao, Q. T.
2008
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6
Poster
Schottky-barrier height tuning of NiGe/n-Ge contacts using arsenic segregation
Müller, M.
2008
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7
Conference Presentation
Schottky Barrier Height Modulation of NiSi/Si Contacts by Dopant Segregation
Urban, C.
2008
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8
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Schottky barrier height modulation by Arsenic Dopant segregation
Urban, C.
2008
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9
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Schottky Barrier Height Modulation by Arsenic Dopant Segregation
Urban, C.
2008
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Mantl, S.
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Müller, M.
Sandow, C.
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Zhao, Q. T.
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Research Program
Grundlagen für zukünftige Informationstechnologien
9
Contributing Institute
Halbleiter-Nanoelektronik; IBN-1
JARA-FIT; JARA-FIT
5
Center of Nanoelectronic Systems for Information Technology; CNI
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Zentralabteilung für Chemische Analysen; ZCH
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