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1

Journal Article

Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaO x thin film with x ∼ 1

Rosário, Carlos M. M.
2019

Nanoscale, 11 (2019) 36, S. 16978 - 16990

“...Schönhals, Alexander...”

2

Contribution to a conference proceedings

The influence of interfacial (sub)oxide layers on the properties of pristine resistive switching devices.

Kindsmuller, Andreas
2018

“...Schonhals, Alexander...”

3

Journal Article

Role of the Electrode Material on the RESET Limitation in Oxide ReRAM Devices

Schönhals, Alexander
2018

Advanced electronic materials, 4 (2018) 2, S. 1700243 -

“...Schönhals, Alexander...”

4

Journal Article

Correlation between the transport mechanisms in conductive filaments inside Ta 2 O 5 -based resistive switching devices and in substoichiometric TaO x thin films

Rosário, Carlos M. M.
2018

Applied physics letters, 112 (2018) 21, S. 213504 -

“...Schönhals, Alexander...”
Published on 2018-05-21. Available in OpenAccess from 2019-05-21. Published on 2018-05-21. Available in OpenAccess from 2019-05-21.

5

Contribution to a conference proceedings

Overcoming the RESET Limitation in Tantalum Oxide-Based ReRAM Using an Oxygen-Blocking Layer

Schonhals, Alexander
2017

“...Schonhals, Alexander...”

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