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Moers, J.
1999
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Moers, J.
1999
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Talk (non-conference)
Low temperature growth of SiO2 on Si(100) under UHV conditions using a heated molecular beam of tetraethoxysilane
Pirug, G.
1999
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Talk (non-conference)
Low temperature growth of SiO2 under UHV conditions using a heated molecular beam of tetraethoxysilane
Pirug, G.
1999
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3
Talk (non-conference)
Vertikale Si-MOSFETs mit reduzierten parasitären Kapazitäten
Moers, J.
1999
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4
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Vertical p-MOSFETs with gate oxide deposition before selective epitaxial growth
Moers, J.
1999
Solid state electronics, 43 (1999) S. 529 - 535
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5
Journal Article
A 19 Ghz vertical Si p-channel MOSFET
Moers, J.
1999
Electronics letters, 35 (1999) S. 239
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Talk (non-conference)
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Marso, M. A.
5
Moers, J.
Klaes, D.
3
Kordos, P.
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Lüth, H.
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Tönnesmann, A.
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Vescan, L.
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Wickenhäuser, S.
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Bonzel, D. I.
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Verhasselt, J.
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Pirug, Gerhard
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Halbleiterbauelemente und Analytik
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Grenzflächenaspekte der Informationstechnik
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Institut für Schicht- und Ionentechnik; ISI
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Institut für Grenzflächenforschung und Vakuumphysik; IGV
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1999
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