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1

Journal Article

Spin precession and modulation in ballistic cylindrical nanowires due to the Rashba effect

Bringer, A.
2011

Physical Review B Physical review / B, 83 83 (2011 2011) 11 11, S. 115305 115305

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2

Journal Article

Improved gate-control in InAs nanowire structures by the use of GdScO3 as a gate dielectric

Volk, C.
2010

Applied physics / A, 100 (2010) S. 305 - 308

3

Journal Article

Strain-enhanced electron mobility anisotropy in InxGa1-xAs/InP two-dimensional electron gases

Akabori, M.
2010

Physica / E, 42 (2010) S. 1130 - 1133

4

Journal Article

Josephson supercurrent in Nb/InN-nanowire/Nb junctions

Frielinghaus, R.
2010

Applied physics letters, 96 (2010) S. 132504

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5

Journal Article

Universal conductance fluctuations and localization effects in InN nanowires connected in parallel

Alagha, S.
2010

Journal of applied physics, 108 (2010) S. 113704

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6

Journal Article

Spin-orbit coupling and phase coherence in InAs nanowires

Estévez Hernández, S.
2010

Physical Review B Physical review / B, 82 82 (2010 2010) 23 23, S. 235303 235303

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7

Journal Article

LaLuO3 as high-k gate dielectric for InAs nanowire structures

Volk, C.
2010

Semiconductor science and technology, 25 (2010) S. 085001

8

Journal Article

Phase-coherence and symmetry in four-terminal magnetotransport measurements on InN nanowires

Frielinghaus, R.
2009

Applied physics letters, 94 (2009) S. 252107

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9

Journal Article

Spin-orbit coupling and phase-coherent transport in InN nanowires

Petersen, G.
2009

Physical Review B Physical review / B, 80 80 (2009 2009) 12 12, S. 125321 125321

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10

Journal Article

Electrical transport properties of single undoped and n-type doped InN nanowires

Richter, T.
2009

Nanotechnology, 20 (2009) S. 405206

11

Journal Article

Spin-orbit coupling in GaxIn1-xAs/InP two-dimensional electron gases and quantum wire structures

Schäpers, T.
2009

Semiconductor science and technology, 24 (2009) S. 064001

12

Journal Article

Influence of growth temperature on the selective area MOVPE of InAs nanowires on GaAs (111) B using N2 carrier gas

Akabori, M.
2009

Journal of crystal growth, 311 (2009) S. 3813 - 3816

13

Journal Article

Measurement of effective electron mass in biaxial tensile strained silicon on insulator

Feste, S. F.
2009

Applied physics letters, 95 (2009) S. 182101

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14

Journal Article

Temperature-dependence of the phase-coherence length in InN nanowires

Blömers, C.
2008

Applied physics letters, 92 (2008)

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15

Journal Article

Phase-coherent transport in InN nanowires of various sizes

Blömers, C.
2008

Physical Review B Physical review / B, 77 77 (2008 2008) 20 20, S. 201301 201301

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16

Journal Article

Spin-splitting analysis of a two-dimensional electron gas in an almost strain-free In0.89Ga0.11Sb/In0.88Al0.12Sb by magneto-resistance measurements

Akabori, M.
2008

Physical Review B Physical review / B, 77 77 (2008 2008) 20 20, S. 205320 205320

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17

Journal Article

Flux Quantisation Effects in InN Nanowires

Richter, T.
2008

Nano letters, 8 (2008) S. 2834 - 2838

18

Journal Article

InxGa1-xAs/InP selective area metal-organic vapor phase epitaxy for non-magnetic semiconductor spintronics

Akabori, M.
2008

Journal of crystal growth, 310 (2008) S. 4821 - 4825

19

Journal Article

Enhanced spin-orbit scattering length in narrow AlxGa1-xN/GaN wires

Lehnen, P.
2007

Physical Review B Physical review / B, 76 76 (2007 2007) 20 20, S. 205307 205307

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20

Journal Article

Andreev reflection and strongly enhanced magnetoresistance oscillations in GaxIn1-xAs/InP heterostructures with superconducting contacts

Batov, I. E.
2007

Physical Review B Physical review / B, 76 76 (2007 2007) 11 11, S. 115313 115313

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