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1

Determination of energy thresholds of electron excitations at semiconductor/insulator interfaces using trap-related displacement currents

Afanas'ev, V. V.
2019

Microelectronic engineering, 215 (2019) S. 110992 -

2

Journal Article

Oxidation-induced electron barrier enhancement at interfaces of Ge-based semiconductors (Ge, Ge$_{1−x}$ Sn$_{x}$ , Si$_{y}$ Ge$_{1−x-y}$ Sn$_{x}$ ) with Al$_{2}$ O$_{3}$

Afanas'ev, V. V.
2017

Microelectronic engineering, 178 (2017) S. 141 - 144

3

Journal Article

Photoconductivity of Hf-based binary metal oxides

Shamuilia, S.
2008

Journal of applied physics, 104 (2008) S. 114103-1 - 114103-6

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4

Journal Article

Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides: Sc2O3, Lu2O3, LaLuO3

Afanas'ev, V. V.
2007

Microelectronic engineering, 84 (2007) S. 2278 - 2281

5

Journal Article

Preparation and characterization of rare earth scandates as alternative gate oxide materials

Wagner, M.
2006

Solid state electronics, 50 (2006) S. 58 - 62

6

Journal Article

Band alignment between (100) Si and amorphous LaAlO3,LaScO3, and Sc2O3: Atomically abrupt versus interlayer-containing interfaces

Afanas'ev, V. V.
2006

Applied physics letters, 88 (2006) S. 032104

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7

Journal Article

Amorphous lanthanum lutetium oxide thin films as an alternative high-k gate dielectric

Lopes, J. M. J.
2006

Applied physics letters, 89 (2006) S. 222902

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8

Journal Article

Ternary rare-earth metal oxide high-k layers on silicon oxide

Zhao, C.
2005

Applied physics letters, 86 (2005) S. 132903-1 - 132903-3

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9

Journal Article

Band alignment between (100)Si and complex rare earth/transition metal oxides

Afanas'ev, V. V.
2004

Applied physics letters, 85 (2004) S. 5917 - 5919

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