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1

Electronic properties in MOCVD mono- and bilayer MoS2 on CVD single-layer graphene on α-Al2O3 (0001) at atomic resolution

Wördenweber, Henrik
2022

2

Journal Article

Effect of the Threshold Kinetics on the Filament Relaxation Behavior of Ag‐Based Diffusive Memristors

Chekol, Solomon Amsalu
2022

Advanced functional materials, 32 (2022) 15, S. 2111242 -

OpenAccess OpenAccess

3

Contribution to a book
Contribution to a conference proceedings

50x Endurance Improvement in TaOx RRAM by Extrinsic Doping

Kempen, Tim
2021

4

Contribution to a book
Contribution to a conference proceedings

An Ag/HfO2/Pt Threshold Switching Device with an Ultra-Low Leakage (< 10 fA), High On/OffRatio (> 1011), and Low Threshold Voltage (< 0.2 V) for Energy-Efficient Neuromorphic Compu...

Chekol, Solomon Amsalu
2021

5

Conference Presentation

Physics-Based Modeling of HRS Instability and Retention Phenomena in Filamentary VCM ReRAM

Kopperberg, N.
2021

6

Journal Article

Utilizing the Switching Stochasticity of HfO2/TiOx-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns

Bengel, Christopher
2021

Frontiers in neuroscience, 15 (2021) S. 661856

OpenAccess

7

Conference Presentation

Redox-based Memristive Switches for Neuromorphic Computing

Ziegler, Tobias
2021

8

Conference Presentation

Stochastically Switching HfO2/TiOx ReRAM Devices for Spiking Neural Network Synapses

Cüppers, Felix
2021

9

Conference Presentation

Enhanced Performance of Ag/HfO2/Pt-based Diffusive Threshold Switches for Energy-Efficient Neuromorphic Computing

Chekol, Solomon
2021

10

Poster

Integrate and Fire Neurons Based on Diffusive Memristors for Spiking Neural Networks

Chekol, Solomon
2021

11

Conference Presentation

Integrate and Fire Neurons Based on Diffusive Memristors for Spiking Neural Networks

Chekol, Solomon
2021

12

Conference Presentation

An Ag/HfO2/Pt Threshold Switching Device with an Ultra-Low Leakage (< 10 fA), High On/Off Ratio (> 1011), and Low Threshold Voltage (< 0.2 V) for Energy-Efficient Neuromorphic Comp...

Chekol, Solomon
2021

13

Journal Article

Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory

Wiefels, Stefan
2021

IEEE transactions on electron devices, 68 (2021) 3, S. 1024 - 1030

OpenAccess

14

Journal Article

A Consistent Model for Short-Term Instability and Long-Term Retention in Filamentary Oxide-Based Memristive Devices

Kopperberg, Nils
2021

ACS applied materials & interfaces, 13 (2021) 48, S. 58066 - 58075

OpenAccess

15

Conference Presentation

Imaging topotactic phase transitions in memristive SrFeOx devices by spectromicroscopy

Nallagatla, Venkata Raveendra
2021

16

Poster

CVD growth of single layer graphene on α-Al2O3 and multiscale analysis of MoS2/Graphene/α-Al2O3 2D-layer stacks

Wördenweber, Henrik
2021

OpenAccess

17

Poster

Nanoscale characterization of single layer graphene on α-Al2O3 (0001)

Wördenweber, Henrik
2021

OpenAccess

18

Journal Article

Intrinsic RESET Speed Limit of Valence Change Memories

von Witzleben, Moritz
2021

ACS applied electronic materials, 3 (2021) 12, S. 5563 - 5572

OpenAccess OpenAccess

19

Journal Article

Determining the Electrical Charging Speed Limit of ReRAM Devices

von Witzleben, M.
2021

IEEE journal of the Electron Devices Society, 9 (2021) S. 667 - 678

OpenAccess

20

Journal Article

HRS Instability in Oxide-Based Bipolar Resistive Switching Cells

Wiefels, Stefan
2020

IEEE transactions on electron devices, 67 (2020) 10, S. 4208 - 4215

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