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Waser, Rainer
Elektronische Materialien; PGI-7
2016
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Waser, Rainer
Elektronische Materialien; PGI-7
2016
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Journal Article
3
Contribution to a book
2
Conference Presentation
1
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1
Conference Presentation
Internal Cell Resistance as the Origin of Abrupt Reset Behavior in HfO2-Based Devices Determined from Current Compliance Series
Hardtdegen, Alexander
2016
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2
Contribution to a book
Physics and Chemistry of Nanoionic Cells
Ielmini, Daniele
2016
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3
Journal Article
Nanoionic Resistive Switching Memories: On the Physical Nature of the Dynamic Reset Process
Marchewka, Astrid
2016
Advanced Electronic Materials, 2 (2016) 1, S. n/a - n/a
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4
Contribution to a book
Electrochemical Metallization Memories
Ielmini, Daniele
2016
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5
Journal Article
Realization of Minimum and Maximum Gate Function in Ta$_{2}$O$_{5}$-based Memristive Devices
Breuer, Thomas
2016
Scientific reports, 6 (2016) S. 23967 -
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6
Journal Article
Dependence of the SET switching variability on the initial state in HfO x -based ReRAM
La Torre, Camilla
2015
Physica status solidi / A, 213 (2015) 3, S. 316-319
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6
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1
Document Type
Journal Article
3
Contribution to a book
2
Conference Presentation
1
Name
Waser, Rainer
Menzel, Stephan
3
Ielmini, Daniele
2
La Torre, Camilla
2
Linn, Eike
2
Rana, Vikas
2
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Roesgen, Bernd
2
Valov, Ilia
2
Breuer, Thomas
1
Du, Hongchu
1
Fleck, Karsten
1
Funck, Carsten
1
Hardtdegen, Alexander
1
Hoffmann-Eifert, Susanne
1
Jia, Chun-Lin
1
Kozicki, Michael N.
1
Marchewka, Astrid
1
Mayer, Joachim
1
Mitkova, Maria
1
Nielen, Lutz
1
Skaja, Katharina
1
Starschich, Sergej
1
Waser, R.
1
Zhang, Hehe
1
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Research Program
Controlling Collective States
3
Controlling Electron Charge-Based Phenomena
3
Contributing Institute
Elektronische Materialien; PGI-7
JARA Institut Green IT; PGI-10
2
JARA-FIT; JARA-FIT
2
Mikrostrukturforschung; PGI-5
1
Scientific Report
2016
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