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21

Journal Article

In‐Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches

Ziegler, Tobias
2020

Advanced intelligent systems, 2 (2020) 10, S. 2000134 -

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”
OpenAccess

22

Journal Article

In‐Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches

Ziegler, Tobias
2020

Advanced intelligent systems, 2 (2020) 10, S. 2070100 -

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”
OpenAccess

23

Contribution to a conference proceedings

The speed of sequence processing in biological neuronal networks

Bouhadjar, Younes
2020

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”
OpenAccess

24

Journal Article

Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaO x thin film with x ∼ 1

Rosário, Carlos M. M.
2019

Nanoscale, 11 (2019) 36, S. 16978 - 16990

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”

25

Talk (non-conference)

Constraints on sequence processing speed in biological neuronal networks

Bouhadjar, Younes
2019

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”
OpenAccess OpenAccess

26

Constraints on sequence processing speed in biological neuronal networks

Bouhadjar, Younes
2019

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”
OpenAccess

27

Constraints on sequence processing speed in biological neuronal networks

Bouhadjar, Younes
2019

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”
OpenAccess

28

Conference Presentation

Constraints on sequence processing speed in biological neuronal networks

Bouhadjar, Younes
2019

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”
OpenAccess OpenAccess

29

Journal Article

On the role of the metal oxide/reactive electrode interface during the forming procedure of valence change ReRAM devices

Kindsmüller, Andreas
2019

Nanoscale, 11 (2019) 39, S. 18201 - 18208

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”

30

Contribution to a book

On the universality of the I – V switching characteristics in non-volatile and volatile resistive switching oxides

Wouters, Dirk J.
2019

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”

31

Constraints on sequence processing speed in biological neuronal networks

Bouhadjar, Younes
2019

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”
OpenAccess

32

Journal Article

Different threshold and bipolar resistive switching mechanisms in reactively sputtered amorphous undoped and Cr-doped vanadium oxide thin films

Rupp, Jonathan A. J.
2018

Journal of applied physics, 123 (2018) 4, S. 044502 -

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”
Published on 2018-01-24. Available in OpenAccess from 2019-01-24. Published on 2018-01-24. Available in OpenAccess from 2019-01-24.

33

Journal Article

Correlation between the transport mechanisms in conductive filaments inside Ta 2 O 5 -based resistive switching devices and in substoichiometric TaO x thin films

Rosário, Carlos M. M.
2018

Applied physics letters, 112 (2018) 21, S. 213504 -

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”
Published on 2018-05-21. Available in OpenAccess from 2019-05-21. Published on 2018-05-21. Available in OpenAccess from 2019-05-21.

34

Journal Article

Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO 2 /Ti/Pt Nanosized ReRAM Devices

Zhang, Hehe
2018

ACS applied materials & interfaces, 10 (2018) 35, S. 29766 - 29778

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”

35

Contribution to a conference proceedings

The influence of interfacial (sub)oxide layers on the properties of pristine resistive switching devices.

Kindsmuller, Andreas
2018

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”

36

Journal Article

Role of the Electrode Material on the RESET Limitation in Oxide ReRAM Devices

Schönhals, Alexander
2018

Advanced electronic materials, 4 (2018) 2, S. 1700243 -

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”

37

Contribution to a conference proceedings

Overcoming the RESET Limitation in Tantalum Oxide-Based ReRAM Using an Oxygen-Blocking Layer

Schonhals, Alexander
2017

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”

38

Journal Article

Volatile HRS asymmetry and subloops in resistive switching oxides

La Torre, Camilla
2017

Nanoscale, 9 (2017) 38, S. 14414 - 14422

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”

39

Contribution to a conference proceedings

Lowering forming voltage and forming-free behavior of Ta2O5 ReRAM devices

Kim, Wonjoo
2016

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”

40

Journal Article

Impact of oxygen exchange reaction at the ohmic interface in Ta$_{2}$ O$_{5}$ -based ReRAM devices

Kim, Wonjoo
2016

Nanoscale, 8 (2016) 41, S. 17774 - 17781

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”

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