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Halbleiter-Nanoelektronik; IBN-1
Holländer, Bernhard
2007
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Halbleiter-Nanoelektronik; IBN-1
Holländer, Bernhard
2007
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1
Talk (non-conference)
Large Current Enhancement in n-MOSFETs with Strained Si on Insulator
Mantl, S.
2007
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2
Poster
Strained Silicon on Insulator for Advanced CMOS Devices
Mantl, S.
2007
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3
Journal Article
Asymmetric strain relaxation in patterned SiGe layers: A means to enhance carrier mobilities in Si cap layers
Buca, D.
2007
Applied physics letters, 90 (2007) S. 032108
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4
Journal Article
Study of the relaxation of strain in patterned Si/SiGe structures using an x-ray diffraction technique
Khan, A. R.
2007
Semiconductor science and technology, 22 (2007) S. s212 - s215
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Strained Silicon on Insulator Fabrication for Advanced CMOS Devices
Buca, D.
2007
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Nanocavity buffer induced by gas ion implantation in silicon substrate for strain relaxation of heteroepitaxial Si1-xGex/Si thin layers
Raissi, M.
2007
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7
Talk (non-conference)
Enhancement of the relaxation of SiGe layers by He ion implantaion using a Si(C) layer
Buca, D.
2007
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Name
Holländer, Bernhard
Buca, Dan Mihai
6
Mantl, S.
6
Loo, R.
5
Nguyen, D.
4
Feste, S.
3
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Gösele, U.
3
Horstmann, M.
3
Reiche, M.
3
Trinkaus, H.
3
Zhao, Q. T.
3
Buchholtz, W.
2
Caymax, M.
2
Goryll, M.
2
Luysberg, Martina
2
Wei, A.
2
Bauer, G.
1
Belgacem, C.H.
1
Buchholz, W.
1
Coudreau, C.
1
Feijoo, D.
1
Fnaiech, M.
1
Heuken, M.
1
Khan, A. R.
1
Lancin, M.
1
Lazzari, J.-L.
1
Lenk, Steffi
1
Loo, R
1
Nitsche, S.
1
Ntsoenzok, E.
1
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Research Program
Grundlagen für zukünftige Informationstechnologien
6
Erneuerbare Energien
1
Contributing Institute
Center of Nanoelectronic Systems for Information Technology; CNI
7
Halbleiter-Nanoelektronik; IBN-1
JARA-FIT; JARA-FIT
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2007
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