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Halbleiter-Nanoelektronik; IBN-1
2009
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Halbleiter-Nanoelektronik; IBN-1
2009
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1
Journal Article
Addition of yttrium into HfO2 films: Microstructure and electrical properties
Dubourdieu, C.
2009
Journal of vacuum science & technology / A, 27 (2009) S. 503 - 514
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2
Journal Article
Formation of GaN nanodots on Si (111) by droplet nitridation
Debnath, R. K.
2009
Journal of crystal growth, 311 (2009) S. 3389 - 3394
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3
Journal Article
Characterization of gadolinium oxide film by pulse laser deposition
Cheng, X.
2009
Applied surface science, 256 (2009) S. 921 - 923
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4
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The properties of high-k gate dielectric films deposited on HRSOI
Cheng, X.
2009
Microelectronic engineering, 86 (2009) S. 2404 - 2407
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Cheng, X.
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Research Program
Grundlagen für zukünftige Informationstechnologien
4
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Halbleiter-Nanoelektronik; IBN-1
JARA-FIT; JARA-FIT
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Zentralabteilung für Chemische Analysen; ZCH
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