JuLib | Articles & more

581

Journal Article

Ga segregation and the effect of Si and Ge interlayers at the GaAs(lOO)/AlAs heterostructure

Lüth, H.

Physical review / B, 48 (1993) 20, S. 15138 - 15143

OpenAccess

582

Journal Article

Determination of the valence band offset of Si/Si0.7Ge0.3/Si quantum wells using deep level transient spectroscopy

Lüth, H.

Journal of applied physics, 73 (1993) 11, S. 7427 - 7430

OpenAccess

583

Journal Article

Porosity superlattices: a new class of Si heterostructures

Grosse, P.

Journal of physics / D, 27 (1994) S. 1333 - 1336

OpenAccess

584

Journal Article

Quasi-two-dimensional plasmons of a single 6-doped layer in GaAs studied by high-resolution electron-energy-loss spectroscopy

Lüth, H.

Physical review / B, 47 (1993) 7, S. 3819 - 3826

OpenAccess

585

Journal Article

Magnetotransport and photoluminescence of two-dimensional hole gases in Si/Sil -, Ge, /Si heterostructures

Stoica, T.

Physical review / B, 50 (1994) 24, S. 18113 - 18123

OpenAccess

586

Journal Article

Electronic transitions in some phthalocyanine and NH-rhodanine-merocyanine film studied by inelastic-electron-tunneling spectroscopy

Ewert, S.

Physical review / B, 18 (1978) 8, S. 4241 - 4249

OpenAccess

587

Journal Article

A Raman study of Au/Te/Au/GaAs (100) ohmic contacts

Silverans, R. E.

Journal of applied physics, 71 (1992) 2, S. 739 - 743

OpenAccess

588

Journal Article

Identification of the Ohmic-contact formation mechanism in the Au/Te/Au/GaAs system

Van Rossum, M.

Physical review / B, 45 (1992) 20, S. 11863 - 11875

OpenAccess

589

Journal Article

Strain dependence of the valence-band offset in InAs/GaAs heterojunctions determined by ultraviolet photoelectron spectroscopy

Lüth, H.

Physical review / B, 50 (1994) 11, S. 7833 - 7837

OpenAccess

590

Journal Article

Low- and high-field transport properties of pseudomorphic InxGa1-xAs/lnP (0.73 kleiner gleich x kleiner gleich 0.82) p-type modulation-doped single-quantum-well structures

Lüth, H.

Journal of applied physics, 75 (1994) 7, S. 3507 - 3515

OpenAccess

591

Journal Article

Barrier height enhancement of Schottky diodes on n-ln0.53Ga0.47As by cryogenic processing

Lüth, H.

Applied physics letters, 63 (1993) 14, S. 1939 - 1941

OpenAccess

592

Journal Article

Optical and structural investigation of SiGe/Si quantum wells

Jäger, W.

Applied physics letters, 60 (1992) 18, S. 2183 - 2185

OpenAccess

593

Journal Article

Cathodoluminescence study of erbium in La1_xErxF3 epitaxial layers on Si(111)

Strümpler, R.

Applied physics letters, 57 (1990) 23, S. 2422 - 2424

OpenAccess

594

Journal Article

Ion beam synthesis of buried a-FeSi2 and ß-FeSi2 layers

Lüth, H.

Applied physics letters, 59 (1991) 17, S. 2145 - 2147

OpenAccess

595

Journal Article

Gas source molecular beam epitaxy of FeSi2/Si(l 11) heterostructures

Gerthsen, D.

Applied physics letters, 62 (1992) 18, S. 2271 - 2273

OpenAccess

596

Journal Article

Optimization of modulation-doped Ga1- xInxAs/lnP heterostructures towards extremely high mobilities

Jäger, W.

Journal of applied physics, 73 (1993) 9, S. 4489 - 4493

OpenAccess

Narrow Search Results