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Halbleiter-Nanoelektronik; PGI-9
Breuer, Udo-Werner
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Halbleiter-Nanoelektronik; PGI-9
Breuer, Udo-Werner
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1
Journal Article
Low temperature RPCVD epitaxial growth of Si1−xGex using Si2H6 and Ge2H6
Wirths, Stephan
2013
Solid state electronics, 83 S. 2 - 9
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2013
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2
Journal Article
Inhomogeneity of donor doping in SrTiO3 substrates studied by fluorescence-lifetime imaging microscopy
Rodenbücher, C.
2013
Applied physics letters, 103 (2013) 16, S. 162904 -
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3
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Tensely strained GeSn alloys as optical gain media
Wirths, S.
2013
Applied physics letters, 103 (2013) 19, S. 192110 -
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4
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Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing
Luong, Gia Vinh
2013
Journal of applied physics, 113 (2013) 20, S. 204902
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5
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First studies of ITER diagnostic mirrors in a tokamak with all-metal interior: results of first mirror test in ASDEX Upgrade
Litnovsky, Andrey
2012
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6
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Influence of growth temperature on GaN:Cr incorporation and structural properties in MOVPE
Cho, Y. S.
2009
Journal of crystal growth, 312 (2009) 1, S. 1 - 9
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Breuer, Udo-Werner
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Holländer, Bernhard
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Mantl, Siegfried
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Stoica, Toma
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Grützmacher, Detlev
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Bochem, Hans Peter
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Buzi, Luxherta
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Frontiers of charge based Electronics
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Helmholtz Interdisciplinary Doctoral Training in Energy and Climate Research (HITEC)
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Plasma-wall interactions
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Halbleiter-Nanoelektronik; PGI-9
Analytik; ZEA-3
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Elektronische Materialien; PGI-7
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