JuLib | Articles & more

1

Journal Article

Investigation of a hydrogen implantation-induced blistering phenomenon in Si0.70Ge0.30

Singh, R.
2011

Semiconductor science and technology, 26 (2011) S. 125001

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2

Contribution to a book
Contribution to a conference proceedings

Thermal Stability and Interface Improvement of Thin NiSiGe by C+ ion implantation

Zhang, B.
2011

“...2011...”

3

Contribution to a book
Contribution to a conference proceedings

NiSi Nano-contacts to Strained and Unstrained Silicon Nanowires

Habicht, S.
2011

“...2011...”

4

Journal Article

Investigation of the surface properties of gold nanowire arrays

Yao, H.
2011

Applied surface science, 258 (2011) S. 147 -1 50

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5

Journal Article

Tensile strained SiGe quantum well infrared photodetectors based on a light-hole ground state

Rauter, P.
2011

Applied physics letters, 98 (2011) S. 211106

“...2011...”
Get full text Published under German "Allianz" Licensing conditions on 2011-05-23. Available in OpenAccess from 2011-05-23

6

Journal Article

Zn nanoparticles irradiated with swift heavy ions at low fluences: Optically-detected shape elongation induced by nonoverlapping ion tracks

Amekura, H.
2011

Physical Review B Physical review / B, 83 83 (2011 2011) 20 20, S. 205401 205401

“...2011...”
Get full text OpenAccess OpenAccess

7

Journal Article

Epitaxial growth of Ni(Al)Si0.7Ge0.3 on Si0.7Ge0.3/Si(100) by Al interlayer mediated epitaxy

Zhang, B.
2011

Applied physics letters, 98 (2011) S. 252101

“...2011...”
Get full text Published under German "Allianz" Licensing conditions on 2011-06-20. Available in OpenAccess from 2011-06-20

8

Contribution to a book

Fabrication and electrical characterization of high-k LaGdO3 thin films and field effect transistors

Pavunny, S.P.
2011

“...2011...”

9

Contribution to a book

Investigation of Electron and Hole Charge Trapping in LaLuO3 Stack MOS Capacitor Using the Three-Pulse CV Technique

Sedghi, N.
2011

“...2011...”

10

Contribution to a book

Electrical and structural properties of ternary rare-earth oxides on Si and higher mobility substrates and their integration as high-k gate dielectrics in MOSFET devices

Lopes, J.M.J.
2011

“...2011...”

11

Conference Presentation

Tunneling Field-Effect Transistor with a Strained Si Channel and a Si0.5Ge0.5 Source

Zhao, Q.T.
2011

“...2011...”

12

Journal Article

Silicon Nanowire Tunneling Field-Effect Transistor Arrays: Improving Subthreshold Performance Using Excimer Laser Annealing

Smith, J.T.
2011

IEEE Transactions on Electron Devices, 58 (2011) S. 1822 - 1829

“...2011...”

13

Conference Presentation

20nm gate length Schottky MOSFETs with ultra thin NiSi/epitaxial NiSi2 source/drain

Knoll, L.
2011

“...2011...”

14

Conference Presentation

Lanthanum Lutetium oxide integration in a gate-first process on SOI MOSFETs

Nichau, A.
2011

“...2011...”

15

Conference Presentation

Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors

Schmidt, M.
2011

“...2011...”

16

Conference Presentation

NiSi Nano-contacts to Strained and Unstrained Silicon Nanowires

Habicht, S.
2011

“...2011...”

17

Contribution to a book
Contribution to a conference proceedings

Analysis of n-type Schottky-Barrier MOSFETs

Tinoco, J.C.
2011

“...2011...”

18

Journal Article

Improved NiSi0.8Ge0.2/Si0.8Ge0.2 Contacs by C+ Pre-Implantation

Zhang, B.
2011

Electrochemical and solid-state letters, 14 (2011) S. H261-H263

“...2011...”

19

Journal Article

High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate

Yu, W.
2011

Solid state electronics, 62 (2011) 1, S. 185 - 188

“...2011...”

20

Journal Article

Integration of MOSFETs with SiGe dots as stressor material

Nanver, L.K.
2011

Solid state electronics, 60 (2011) S. 75 - 83

“...2011...”

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