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Institut für Grenzflächenforschung und Vakuumphysik; IGV
1998
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Institut für Grenzflächenforschung und Vakuumphysik; IGV
1998
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Conference Presentation
High temperature STM investigations of the growth of Si and Ge on silicon surfaces
Voigtländer, B.
1998
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Combined EELS/STM study of the adsorption of nitric oxide and the formation of GaOxNy on CoGa(001)
Schmitz, G.
1998
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Hydrogen on semiconductor surfaces
Schaefer, J. A.
1998
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Combined HREELS/LEED study on oxidation of GaN surfaces
Tsuruoka, T.
1998
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Grenzflächenaspekte der Informationstechnik
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Institut für Grenzflächenforschung und Vakuumphysik; IGV
Scientific Report
1998
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