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Institut für Halbleiterschichten und Bauelemente; ISG-1
Bernát, J.
Talk (non-conference)
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Institut für Halbleiterschichten und Bauelemente; ISG-1
Bernát, J.
Talk (non-conference)
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Talk (non-conference)
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Talk (non-conference)
Influence of passivation-induced stress on the performance of AlGaN/GaN HEMTs
Gregusova, D.
2004
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Talk (non-conference)
DC and Pulsed Behaviour of Undoped and Doped AlGaN/GaN/SiC HEMTs before and after Si3N4 Passivation
Bernát, J.
2004
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Talk (non-conference)
MSM varactor diodes based on AlGaN/ GaN/SiC HEMT layer structures
Marso, M.
2004
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Talk (non-conference)
Influence of carrier supply doping on the RF properties of AlGaN/GaN/SiC high-electron-mobility transistors
Marso, M.
2004
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Talk (non-conference)
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Bernát, J.
Kordos, P.
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Research Program
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
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Institut für Halbleiterschichten und Bauelemente; ISG-1
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2004
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