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Institut für Halbleiterschichten und Bauelemente; ISG-1
Steins, R.
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Heidelberger, G.
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Institut für Halbleiterschichten und Bauelemente; ISG-1
Steins, R.
AND
Heidelberger, G.
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1
Contribution to a conference proceedings
1
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Select result number 1
1
Poster
Improvement of buffer properties for HEMT application using N2 ambient in a horizontal MOVPE reactor with inverted gas inlet
Hardtdegen, H.
2006
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2
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New Approaches for Growth Control of GaN Based HEMT Structures
Hardtdegen, H.
2006
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3
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Influences of H2/N2 Carrier Gas Mixtures on the Characteristics of GaN Epilayers
Cho, Y. S.
2006
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Systematic study on the growth mechanism of GaN/sapphire epilayers grown with different H2 and N2 carrier gas
Cho, Y. S.
2006
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Technology related issues regarding fabrication of AlGaN/GaN-based MOSHFETs with GdScO3 as dielectric
Heidelberger, G.
2006
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5
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Poster
4
Contribution to a book
1
Contribution to a conference proceedings
1
Name
Heidelberger, G.
Kaluza, N.
5
Steins, R.
Cho, Y. S.
4
Hardtdegen, Hilde
4
Marso, M.
3
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Bay, H.
2
Lüth, H.
2
von der Ahe, M.
2
Christen, J.
1
Fox, A.
1
Kordos, P.
1
Lueth, H.
1
Roeckerath, M.
1
Schubert, Jürgen
1
Stefaniak, M.
1
Thillosen, N.
1
Veit, P.
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Wirtz, K.
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Research Program
Grundlagen für zukünftige Informationstechnologien
5
Contributing Institute
Center of Nanoelectronic Systems for Information Technology; CNI
5
Institut für Halbleiterschichten und Bauelemente; ISG-1
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