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Institut für Halbleiterschichten und Bauelemente; ISG-1
Steins, R.
AND
Marso, M.
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Institut für Halbleiterschichten und Bauelemente; ISG-1
Steins, R.
AND
Marso, M.
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Conference Presentation
2
Poster
2
Contribution to a book
1
Contribution to a conference proceedings
1
Talk (non-conference)
1
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1
Poster
New Approaches for Growth Control of GaN Based HEMT Structures
Hardtdegen, H.
2006
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2
Poster
Improvement of buffer properties for HEMT application using N2 ambient in a horizontal MOVPE reactor with inverted gas inlet
Hardtdegen, H.
2006
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3
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Technology related issues regarding fabrication of AlGaN/GaN-based MOSHFETs with GdScO3 as dielectric
Heidelberger, G.
2006
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4
Talk (non-conference)
GaN epilayers grown with different H2/N2 carrier gas mixtures
Cho, Y. S.
2005
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5
Conference Presentation
MOVPE III-nitride growth for high frequency and/or high power application
Hardtdegen, H.
2005
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6
Conference Presentation
Optimization of nitride growth in single wafer horizontal MOVPE reactors for HEMTs
Kaluza, N.
2004
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Conference Presentation
2
Poster
2
Contribution to a book
1
Contribution to a conference proceedings
1
Talk (non-conference)
1
Name
Kaluza, N.
6
Marso, M.
Steins, R.
Hardtdegen, Hilde
5
Cho, Y. S.
3
Heidelberger, G.
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Alam, A.
2
Bay, H.
2
Beccard, R.
2
Bernat, P. F.
2
Javorka, P.
2
Schmitt, T.
2
von der Ahe, M.
2
Fox, A.
1
Hüth, H.
1
Kordos, P.
1
Lueth, H.
1
Roeckerath, M.
1
Schubert, Jürgen
1
Schäpers, Thomas
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Stefaniak, M.
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Thillosen, N.
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Wirtz, K.
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Zettler, J.-T.
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Research Program
Grundlagen für zukünftige Informationstechnologien
4
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
2
Contributing Institute
Center of Nanoelectronic Systems for Information Technology; CNI
6
Institut für Halbleiterschichten und Bauelemente; ISG-1
Scientific Report
2006
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2005
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