JuLib | Articles & more

1

MOVPE GaN Growth: Determination of Activation Energy using In-Situ Reflectometry

Kaluza, N.
2004

2

Use of sic band gap temperature dependence for absolute calibration of emissivity corrected pyrometers in III-nitride MOVPE

Steins, R.
2004

Journal of crystal growth, 272 (2004)

3

Conference Presentation

Optimization of nitride growth in single wafer horizontal MOVPE reactors for HEMTs

Kaluza, N.
2004

4

Conference Presentation

Einfluss von N2 als Trägergas für GaN Wachstum im invertierten Einlass

Steins, R.
2004

5

Conference Presentation

Luminescence Properties of Si-doped MOVPE n-GaN

Thillosen, N.
2004

6

Conference Presentation

MOVPE process for horizontal reactors with reduced parasitic deposition

Hardtdegen, H.
2004

7

Conference Presentation

MOVPE GaN growth: determination of activation energy using in-situ reflectometry

Kaluza, N.
2004

8

Conference Presentation

Use of SiC band-gap temperature dependence for absolute calibration of emissivity corrected pyrometers in III-nitride MOVPE

Steins, R.
2004

9

Poster

Uniform III-nitride growth in single wafer horizontal MOVPE reactors

Hardtdegen, H.
2004

10

Journal Article

Optimierung eines neuen GaN MOVPE-Wachstumsprozesses mit reduzierten parasitären Depositionen

Steins, R.
2004

Verhandlungen der Deutschen Physikalischen Gesellschaft, 39 (2004) S. 204

11

Journal Article

MOVPE GaN Growth: Determination of Activation Energy using In-Situ Reflectometry

Kaluza, N.
2004

Journal of crystal growth, 272 (2004) S. 100 - 105

12

Journal Article

MOVPE process for horizontal reactors with reduced parasitic deposition

Hardtdegen, H.
2004

Journal of crystal growth, 272 (2004) S. 407 - 414

13

Journal Article

MOVPE growth and in situ characterization of GaN layers on sapphire substrates

Hardtdegen, H.
2004

Physica status solidi / A, 201 (2004) S. 312 - 319

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