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Institut für Halbleiterschichten und Bauelemente; ISG-1
Grundlagen für zukünftige Informationstechnologien
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Institut für Halbleiterschichten und Bauelemente; ISG-1
Grundlagen für zukünftige Informationstechnologien
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Conference Presentation
3
Contribution to a book
2
Contribution to a conference proceedings
2
Poster
2
Talk (non-conference)
2
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1
Contribution to a book
Contribution to a conference proceedings
Tuning of NiSi/Si Schottky barrier heights by sulfur segregaton during Ni silicidation and fabrication of Schottky MOSFETs
Zhao, Q. T.
2005
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2
Contribution to a book
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Dopant segregation in Schottky barrier SOI-MOSFETs
Zhang, M.
2005
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3
Poster
Vertical Resonant Tunneling Diodes in the sub-100 nm Range
Wensorra, J.
2005
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4
Conference Presentation
Fabrication and electrical characterization of GaAs/AlAs resonant tunneling nanocolumns with lateral dimensions in the sub-100nm range
Wensorra, J.
2005
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5
Conference Presentation
Fabrication and characterization of a vertical resonant tunneling diode in the sub-100 nm range
Wensorra, J.
2005
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6
Talk (non-conference)
MOVPE von AlGaN/GaN/Saphir: Einfluss der Reaktorhardware
Kaluza, N.
2005
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7
Talk (non-conference)
GaN epilayers grown with different H2/N2 carrier gas mixtures
Cho, Y. S.
2005
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8
Conference Presentation
Observation of Growth during the MOVPE of III-Nitrides
Hardtdegen, H.
2005
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9
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New method for the in situ determination of AlxGa1-xN composition in MOVPE by real-time optical reflectance
Hardtdegen, H.
2005
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9
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Conference Presentation
3
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2
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2
Poster
2
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2
Name
Cho, Y. S.
4
Hardtdegen, Hilde
4
Kaluza, N.
4
Steins, R.
4
Förster, A.
3
Indlekofer, K. M.
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Lepsa, M. I.
3
Wensorra, J.
3
Lenk, Steffi
2
Lüth, H.
2
Mantl, S.
2
Zettler, J.-T.
2
Zhang, M.
2
Zhao, Q. T.
2
Appenzeller, J.
1
Bimberg, D.
1
Breuer, U.
1
Hüth, H.
1
Knoch, J.
1
Marso, M.
1
Reißmann, L.
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Schmidt, R.
1
Sofer, Z.
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Strittmatter, A.
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Thillosen, N.
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Trepk, T.
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Research Program
Grundlagen für zukünftige Informationstechnologien
Contributing Institute
Center of Nanoelectronic Systems for Information Technology; CNI
9
Institut für Halbleiterschichten und Bauelemente; ISG-1
Scientific Report
2005
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