JuLib | Articles & more

1

Journal Article

Investigation of a hydrogen implantation-induced blistering phenomenon in Si0.70Ge0.30

Singh, R.
2011

Semiconductor science and technology, 26 (2011) S. 125001

“...2011...”

2

Journal Article

Characterization of high- LaLuO3 thin film grown on AlGaN/GaN heterostructure by molecular beam deposition

Yang, S.
2011

Applied physics letters, 99 (2011) S. 182103

“...2011...”
Get full text Published under German "Allianz" Licensing conditions on 2011-11-01. Available in OpenAccess from 2011-11-01

3

Journal Article

High mobility strained Si(0.5)Ge(0.5)/SSOI short channel field effect transistors with TiN/GdScO(3) gate stack

Minamisawa, R.A.
2011

Microelectronic engineering, 88 (2011) S. 2955 - 2958

“...2011...”

4

Contribution to a book

Fabrication and electrical characterization of high-k LaGdO3 thin films and field effect transistors

Pavunny, S.P.
2011

“...2011...”

5

Contribution to a book

Investigation of Electron and Hole Charge Trapping in LaLuO3 Stack MOS Capacitor Using the Three-Pulse CV Technique

Sedghi, N.
2011

“...2011...”

6

Contribution to a book

Electrical and structural properties of ternary rare-earth oxides on Si and higher mobility substrates and their integration as high-k gate dielectrics in MOSFET devices

Lopes, J.M.J.
2011

“...2011...”

7

Journal Article

Atomic layer deposition of HfO2 and Al2O3 layers on 300 mm Si wafers for gate stack technology

Lupták, R.
2011

Journal of vacuum science & technology / B, 29 (2011) S. 01A301

“...2011...”

8

Journal Article

High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate

Yu, W.
2011

Solid state electronics, 62 (2011) 1, S. 185 - 188

“...2011...”

9

Journal Article

Integration of MOSFETs with SiGe dots as stressor material

Nanver, L.K.
2011

Solid state electronics, 60 (2011) S. 75 - 83

“...2011...”

10

Journal Article

Epitaxial growth of Ni(Al)Si0.7Ge0.3 on Si0.7Ge0.3/Si(100) by Al interlayer mediated epitaxy

Zhang, B.
2011

Applied physics letters, 98 (2011) S. 252101

“...2011...”
Get full text Published under German "Allianz" Licensing conditions on 2011-06-20. Available in OpenAccess from 2011-06-20

11

Conference Presentation

Tunneling Field-Effect Transistor with a Strained Si Channel and a Si0.5Ge0.5 Source

Zhao, Q.T.
2011

“...2011...”

12

Talk (non-conference)

Selective-Area MOVPE von GaAs/InAs - Core/Shell Nanodrähten

Haas, F.
2011

“...2011...”

13

Poster

GaAs/InAs - Core/shel nanowires grown by SA-MOVPE

Haas, F.
2011

“...2011...”

14

Poster

Approaches to affect InAs nanowire structure in SA-MOVPE

Hardtdegen, H.
2011

“...2011...”

15

Journal Article

New method of creation of a rearrangeable local Coulomb potential profile and its application for investigations of local conductivity of InAs nanowires

Zhukov, A.A.
2011

Physica / E, 44 (2011) S. 690 - 695

“...2011...”

16

Journal Article

High quality TbMnO3 films deposited on YAlO3

Glavic, A.
2011

Journal of alloys and compounds, 509 (2011) S. 5061 - 5063

“...2011...”

17

Poster

Magnetic order in TbMnO3-LaCoO3 superlattices

Glavic, A.
2011

“...2011...”

18

Journal Article

Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layers

Schumann, T.
2011

Nanotechnology, 22 (2011) S. 095603

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19

Journal Article

Properties of uniform diameter InN nanowires obtained under Si doping

Gotschke, T.
2011

Nanotechnology, 22 (2011) S. 125704

“...2011...”

20

Journal Article

Surface-induced effects in GaN nanowires

Calarco, R.
2011

Journal of materials research, 26 (2011) S. 2157 - 2168

“...2011...”

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