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Contribution to a conference proceedings
Institut für Grenzflächenforschung und Vakuumphysik; IGV
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Contribution to a conference proceedings
Institut für Grenzflächenforschung und Vakuumphysik; IGV
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Contribution to a book
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Growth and decay of germanium islands on silicon studied by high temperature STM
Voigtländer, B.
2000
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High temperature-STM investigation of epitaxial growth of Si and Ge on silicon
Voigtländer, B.
2000
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Hydrogen on semiconductor surfaces
Schaefer, J. A.
1998
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Voigtländer, B.
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Grenzflächenaspekte der Informationstechnik
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Institut für Grenzflächenforschung und Vakuumphysik; IGV
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