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1
Contribution to a conference proceedings
Redistribution of three-dimensional divertor footprint induced by time-varying resonant magnetic perturbations on EAST
Jia, M.
2018
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Zhang
,
B
....
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2
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Ultrathin epitaxial Ni-silicide contacts on Si and SiGe: Structural and electrical investigation
Zhao, Q.T.
2012
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3
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Epitaxial growth and properties of NiSiGe
Zhang
,
B
.
2012
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,
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4
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Hole mobility enhancement of quantum-well p-MOSFETs on sSi/sSi0.5 Ge0.5/sSOI heterostructure
Yu, W.
2012
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Zhang
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B
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5
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Thermal Stability and Interface Improvement of Thin NiSiGe by C+ ion implantation
Zhang
,
B
.
2011
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6
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Tunneling Field-Effect Transistor with a Strained Si Channel and a Si0.5Ge0.5 Source
Zhao, Q.T.
2011
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7
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Strained-SiGe p-MOSFET with LaLuO3 as hihg-k gate dielectric and TiN as metal gate
Yu, W.
2010
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Zhang
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B
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8
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Highmobility Si/Si0.5Ge0.5/strained SOI p-MOSFET with HfO2/TiN Gate Stack
Zhang
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B
.
2010
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9
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MOSFETs with High Mobility Channel Materials and Higher-k/Metal Gate Stack
Yu, W.
2010
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10
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Highmobility Si/Si0.5Ge0.5/strained SOI p-MOSFET with HfO2/TiN Gate Stack
Zhang
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B
.
2010
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11
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Highmobility Si-Ge channels and novel high-k materials for NanoMOSFETs
Yu, W.
2010
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11
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Contribution to a conference proceedings
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10
Name
Buca, Dan Mihai
10
Mantl, S.
10
Zhang, B.
10
Yu, W.
8
Hartmann, J.M.
6
Bourdelle, K.K.
5
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Luptak, R.
5
Zhao, Q. T.
5
Zhao, Q.T.
5
Wang, X.
4
Dürgün-Özben, Eylem
3
Holländer, Bernhard
3
Schubert, Jürgen
3
Hartmann, J.-M.
2
Lopes, J. M. J.
2
Nichau, A.
2
Zhang, M.
2
Feng, Wanxiang
1
Fox, A.
1
Gan, K.
1
Ghyselen, B.
1
Gu, S.
1
Hagedorn, M.
1
Jia, Manni
1
Knoll, L.
1
Lenk, Steffi
1
Liang, Yuanying
1
Liu, Y. Q.
1
Lyu, B.
1
Minamisawa, R. A.
1
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Research Program
Grundlagen für zukünftige Informationstechnologien
10
Plasma-Wall-Interaction
1
Contributing Institute
JARA-FIT; JARA-FIT
10
Halbleiter-Nanoelektronik; IBN-1
5
Halbleiter-Nanoelektronik; PGI-9
5
Agrosphäre; IBG-3
1
Analytik; ZEA-3
1
Bioelektronik; ICS-8
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Plasmaphysik; IEK-4
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Quanten-Theorie der Materialien; IAS-1
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