JuLib | Articles & more - {"Halbleiter-Nanoelektronik; IBN-1"}

1

Journal Article

Enhanced Raman Scattering of Ultramarine on Au-coated Ge/Si-nanostructures

Klyachkovskaya, E.
2011

Plasmonics, 6 (2011) S. 413 - 418

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2

Journal Article

InAIM/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAIN

Mikulics, M.
2010

Applied physics letters, 97 (2010) S. 173505

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3

Journal Article

Influence of the epitaxial growth and device processing on the overlay accuracy during processing of the d-DotFET

Moers, J.
2010

Thin solid films, 518 (2010) S. 2565 - 2568

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4

Journal Article

Spin-orbit coupling and phase coherence in InAs nanowires

Estévez Hernández, S.
2010

Physical Review B Physical review / B, 82 82 (2010 2010) 23 23, S. 235303 235303

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5

Journal Article

Titania-assisted electron-beam and synchrotron lithography

Skorb, E.V.
2010

Nanotechnology, 21 (2010) S. 315301

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6

Journal Article

Photo-induced conductance fluctuations in mesoscopic Ge/Si systems with quantum dots

Stepina, N.P.
2010

Journal of physics / Conference Series, 245 (2010) S. 012034

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7

Journal Article

n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility

Jovanovic, V.
2010

IEEE Electron Device Letters, 31 (2010) S. 1083 - 1085

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8

Journal Article

Investigation of the local Ge concentration in Si/SiGe nanostructures by convergent-beam electron diffraction

Ruh, E.
2010

Ultramicroscopy, 110 (2010) S. 1255 - 1266

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9

Journal Article

MOVPE of n-doped GaAs and modulation doped GaAs/AlGaAs nanowires

Sladek, K.
2010

Journal of crystal growth, 312 (2010) S. 635 - 640

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10

Journal Article

X-ray diffraction investigation of a three-dimensional Si/SiGe quantum dot crystal

Holý, V.
2009

Physical review / B, 79 (2009) S. 035324

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11

Journal Article

Output Power Improvement in MSM Photomixers by Modified Finger Contacts Configuration

Mikulics, M.
2009

IEEE photonics technology letters, 21 (2009) S. 146 - 148

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12

Journal Article

Evolution and stability of ordered SiGe islands grown on patterned Si(100) substrates

Dais, C.
2009

Journal of applied physics, 105 (2009) S. 122405

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13

Journal Article

Interdiffusion in Ge rich SiGe/Ge multilayers studied by in situ diffraction

Meduna, M.
2009

Physica status solidi / A, 206 (2009) S. 1775 - 1779

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14

Journal Article

Influence of growth temperature on the selective area MOVPE of InAs nanowires on GaAs (111) B using N2 carrier gas

Akabori, M.
2009

Journal of crystal growth, 311 (2009) S. 3813 - 3816

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15

Journal Article

Raman scattering of phonon-plasmon coupled modes in self-assemled GaN nanowires

Jeganathan, K.
2009

Journal of applied physics, 105 (2009) S. 123707

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16

Journal Article

Growth of Ge dots on templated Si substrates with diffusion-altered holes

Rinke, G.
2009

epl, 85 (2009) S. 58002

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17

Journal Article

Continuous Voltage Tunability of Intersubband Relaxation Times in Coupled SiGe Quantum Well Structures Using Ultrafast Spectroscopy

Rauter, P.
2009

Physical review letters, 102 (2009) S. 147401

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18

Journal Article

Femtosecond electro-optic effect in (Cd,Mn) Te single crystals

Cross, A.S.
2009

Journal of physics / Conference Series, 193 (2009) S. 012057

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19

Journal Article

Ultra flexible SiGe/Si/Cr nanosprings

Grützmacher, D.
2008

Microelectronics Journal, 39 (2008) S. 478 - 481

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20

Journal Article

Sensitivity Enhancement of Metal-Semiconductor-Metal Photodetectors on Low-Temperature-Grown GaAs using Alloyed Contacts

Mikulics, M.
2008

IEEE photonics technology letters, 20 (2008) S. 1054 - 1056

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