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1

Journal Article

Investigation of a hydrogen implantation-induced blistering phenomenon in Si0.70Ge0.30

Singh, R.
2011

Semiconductor science and technology, 26 (2011) S. 125001

“...2011...”

2

Journal Article

Epitaxial growth of Ni(Al)Si0.7Ge0.3 on Si0.7Ge0.3/Si(100) by Al interlayer mediated epitaxy

Zhang, B.
2011

Applied physics letters, 98 (2011) S. 252101

“...2011...”
Get full text Published under German "Allianz" Licensing conditions on 2011-06-20. Available in OpenAccess from 2011-06-20

3

Journal Article

An Improved Si tunnel Field Effect Transistor with a Buried Strained Si1-xGex Source

Zhao, Q.T.
2011

IEEE Electron Device Letters, 32 (2011) S. 1480 - 1482

“...2011...”

4

Journal Article

Silicon Nanowire Tunneling Field-Effect Transistor Arrays: Improving Subthreshold Performance Using Excimer Laser Annealing

Smith, J.T.
2011

IEEE Transactions on Electron Devices, 58 (2011) S. 1822 - 1829

“...2011...”

5

Journal Article

Improved NiSi0.8Ge0.2/Si0.8Ge0.2 Contacs by C+ Pre-Implantation

Zhang, B.
2011

Electrochemical and solid-state letters, 14 (2011) S. H261-H263

“...2011...”

6

Journal Article

High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate

Yu, W.
2011

Solid state electronics, 62 (2011) 1, S. 185 - 188

“...2011...”

7

Journal Article

Zn nanoparticles irradiated with swift heavy ions at low fluences: Optically-detected shape elongation induced by nonoverlapping ion tracks

Amekura, H.
2011

Physical Review B Physical review / B, 83 83 (2011 2011) 20 20, S. 205401 205401

“...2011...”
Get full text OpenAccess OpenAccess

8

Journal Article

Millisecond flash-lamp annealing of LaLuO3

Lehmann, J.
2011

Microelectronic engineering, 88 (2011) S. 1346 - 1348

“...2011...”

9

Journal Article

LaScO3 as higher-k dielectric for p-MOSFETs

Durgun Özben, E.
2011

Microelectronic engineering, 88 (2011) S. 1323 - 1325

“...2011...”

10

Journal Article

Rare-Earth Scandate/TiN Gate Stacks in SOI MOSFETs Fabricated with a Full Replacement Gate Process

Durgun Özben, E.
2011

IEEE Transactions on Electron Devices, 58 (2011) S. 617 - 622

“...2011...”

11

Journal Article

Integration of LaLuO3 (k 30) as High-k Dielectric on Strained and Unstrained SOI MOSFETs with Replacement Gate Process

Durgun Özben, E.
2011

IEEE Electron Device Letters, 32 (2011) S. 15 - 17

“...2011...”

12

Journal Article

Atomic layer deposition of HfO2 and Al2O3 layers on 300 mm Si wafers for gate stack technology

Lupták, R.
2011

Journal of vacuum science & technology / B, 29 (2011) S. 01A301

“...2011...”

13

Journal Article

High mobility strained Si(0.5)Ge(0.5)/SSOI short channel field effect transistors with TiN/GdScO(3) gate stack

Minamisawa, R.A.
2011

Microelectronic engineering, 88 (2011) S. 2955 - 2958

“...2011...”

14

Journal Article

Study of Arsenic ion implantation of patterned strained Si NWs

Minamisawa, R. A.
2011

Solid state electronics, 60 (2011) S. 31 - 36

“...2011...”

15

Journal Article

Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors

Durgun Özben, E.
2011

Journal of vacuum science & technology / B, 29 (2011) S. 01A903

“...2011...”

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