JuLib | Articles & more

1

Journal Article

Millisecond flash-lamp annealing of LaLuO3

Lehmann, J.
2011

Microelectronic engineering, 88 (2011) S. 1346 - 1348

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2

Journal Article

Study of interfaces and band offsets in TiN/amorphous LaLu=3 gate stacks

Mitrovic, I.Z.
2011

Microelectronic engineering, 88 (2011) S. 1495 - 1498

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3

Journal Article

LaScO3 as higher-k dielectric for p-MOSFETs

Durgun Özben, E.
2011

Microelectronic engineering, 88 (2011) S. 1323 - 1325

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4

Journal Article

Influence of the substrate temperature on the Curie temperature and charge carrier density of epitaxial Gd-doped EuO films

Mairoser, T.
2011

Applied physics letters, 98 (2011) S. 102110

“...2011...”
Get full text Published under German "Allianz" Licensing conditions on 2011-03-10. Available in OpenAccess from 2011-03-10

5

Journal Article

Nanoscale photoelectron ionisation detector based of lanthanum hexaboride

Zimmer, C.M.
2011

Physica status solidi / A, 208 (2011) S. 1241 - 1245

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6

Journal Article

Analytical Model for the Extraction of Flaw-Induced Current Interactions for SQUID NDE

Sarreshtedari, F.
2011

IEEE transactions on applied superconductivity, 21 (2011) S. 3442 - 3446

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7

Journal Article

Rare-Earth Scandate/TiN Gate Stacks in SOI MOSFETs Fabricated with a Full Replacement Gate Process

Durgun Özben, E.
2011

IEEE Transactions on Electron Devices, 58 (2011) S. 617 - 622

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8

Journal Article

An Efficient SQUID NDE Defect Detection Approach by Using an Adaptive Finite-Element Modeling

Sarreshtedari, F.
2011

Journal of superconductivity and novel magnetism, 24 (2011)

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9

Journal Article

Integration of LaLuO3 (k 30) as High-k Dielectric on Strained and Unstrained SOI MOSFETs with Replacement Gate Process

Durgun Özben, E.
2011

IEEE Electron Device Letters, 32 (2011) S. 15 - 17

“...2011...”

10

Journal Article

Atomic layer deposition of HfO2 and Al2O3 layers on 300 mm Si wafers for gate stack technology

Lupták, R.
2011

Journal of vacuum science & technology / B, 29 (2011) S. 01A301

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11

Journal Article

Characterization of high- LaLuO3 thin film grown on AlGaN/GaN heterostructure by molecular beam deposition

Yang, S.
2011

Applied physics letters, 99 (2011) S. 182103

“...2011...”
Get full text Published under German "Allianz" Licensing conditions on 2011-11-01. Available in OpenAccess from 2011-11-01

12

Journal Article

High mobility strained Si(0.5)Ge(0.5)/SSOI short channel field effect transistors with TiN/GdScO(3) gate stack

Minamisawa, R.A.
2011

Microelectronic engineering, 88 (2011) S. 2955 - 2958

“...2011...”

13

Journal Article

High quality TbMnO3 films deposited on YAlO3

Glavic, A.
2011

Journal of alloys and compounds, 509 (2011) S. 5061 - 5063

“...2011...”

14

Journal Article

CV measurements on LaLuO3 stack metal-oxide-semiconductor capacitor using a new three-pulse technique

Sedghi, N.
2011

Journal of vacuum science & technology / B, 29 (2011) S. 01AB03

“...2011...”

15

Journal Article

Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors

Durgun Özben, E.
2011

Journal of vacuum science & technology / B, 29 (2011) S. 01A903

“...2011...”

16

Journal Article

Mapping and statistics of ferroelectric domain boundary angles and types

Desmarais, J.
2011

Applied physics letters, 99 (2011) S. 162902

“...2011...”
Get full text Published under German "Allianz" Licensing conditions on 2011-10-17. Available in OpenAccess from 2011-10-17

17

Journal Article

Structural and Electrical Properties of Lanthanum Gadolinium Oxide: Ceramic and Thin Films for High-k Application

Pavunny, S.P.
2011

Integrated ferroelectrics, 125 (2011) S. 44 - 52

“...2011...”

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