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1

Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method

Kuzmik, J.
2002

IEEE Transactions on Electron Devices, 49 (2002) S. 1496 - 1498

OpenAccess

2

Journal Article

Interaction corrections to transport due to quasibound states in open quantum dots

Indlekofer, K. M.
2002

Applied physics letters, 81 (2002) S. 3861 - 3863

OpenAccess

3

Journal Article

Green electroluminescence from a Tb-doped AIN thin-film device on Si

Lu, F.
2002

Journal of applied physics, 92 (2002) S. 2457 - 2460

OpenAccess

4

Journal Article

Organization of Ge dome islands on Si(100) : role of strain and surface - curvature

Sutter, P.
2002

Materials science and engineering / B, 89 (2002) S. 196 - 200

5

Journal Article

Electroluminescence of study on electron-plasma in strained SiGe epitaxial layers

Stoica, T.
2002

Physica / E, 16 (2002) S. 150 - 157

6

Journal Article

Growth and characterization of Ge islands on Si(110)

Ferrandis, P.
2002

Materials science and engineering / B, 89 (2002) S. 171 - 175

OpenAccess OpenAccess

7

Journal Article

Optical characterization of Ge islands grown on Si(110)

Ferrandis, P.
2002

Microelectronics journal, 33 (2002) S. 541 - 546

8

Journal Article

Lateral ordering of Ge islands on Si mesas made by selective epitaxial growth

Vescan, L.
2002

Materials science and engineering / B, 89 (2002) S. 49 - 53

9

Journal Article

Luminescence of laterally ordered Ge islands along 'kleiner' 100 'groesser' directions

Vescan, L.
2002

Journal of applied physics, 91 (2002) S. 10119 - 10126

OpenAccess

10

Journal Article

Ge nanostructures grown by self-assembly : influence of substrate orientation

Vescan, L.
2002

Journal of physics / Condensed matter, 14 (2002) S. 8235

11

Journal Article

Investigation of ferromagnetic microstructures by local Hall effect and magnetic force microscope

Nitta, J.
2002

Japanese journal of applied physics, 41 (2002) S. 2497 - 2500

12

Journal Article

Real-time calibration of wafer temperature, growth rate and composition by optical in-situ techniques during AlxGa1-xAs growth in MOVPE

Haberland, K.
2002

Journal of crystal growth, 240 (2002) S. 87 - 97

13

Journal Article

Effect of helium ion implantation and annealing on the relaxation behaviour of pseudomorphic Si1-xGex/Si(100) buffer layers on Si (100) substrates

Luysberg, M.
2002

Journal of applied physics, 92 (2002) S. 4290 - 4295

OpenAccess

14

Journal Article

Ion implantation of rare earth ions for light emitters

Buchal, C.
2002

Nuclear instruments & methods in physics research / B, 190 (2002) S. 40 - 46

15

Journal Article

Homogeneity analysis of ion-implanted resonant tunneling diodes for applications in digital logic circuits

Malindretos, J.
2002

Superlattices and microstructures, 31 (2002) S. 315 - 325

16

Journal Article

Density-matrix description of a quantum dot system with variable laterial confinement in the single-electron tunneling regime

Indlekofer, K. M.
2002

Physica / B, 314 (2002) S. 499 - 502

17

Journal Article

Preparation of patterned GaAs structures for MEMS and MOEMS

Cambel, V.
2002

Materials science and engineering / C, 19 (2002) S. 161 - 165

18

Journal Article

Photoresponse spectra in p-i-n diodes containing quantum dots

Belyaev, A. E.
2002

Nanotechnology, 13 (2002) S. 94 - 96

OpenAccess

19

Journal Article

Resonant tunneling effect in a periodically modulated electrical field

Vitusevich, S. A.
2002

Physica / E, 13 (2002) S. 811 - 814

20

Journal Article

Top contact for vertical double-gate MOSFETs

Moers, J.
2002

Microelectronic engineering, 64 (2002) S. 465 - 471

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