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Journal Article 4 Poster 2 Conference Presentation 1 Contribution to a book 1 Contribution to a conference proceedings 1

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Journal Article

High-k dielectric materials by metalorganic chemical vapor deposition: growth and characterization

Thomas, R.
2005

Ferroelectrics, 327 (2005) S. 111

“...Thomas, R....”

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Journal Article

Metal organic chemical vapor deposition of (Ba,Sr)TiO3: Nucleation and growth on Pt-(111)

Regnery, S.
2005

Journal of applied physics, 98 (2005) S. 084904-1 - 084904-12

“...Thomas, R....”

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Conference Presentation

Zirconium dioxide thin films for high-K applications by MOCVD from novel mononuclear precursors

Thomas, R.
2005

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Contribution to a book
Contribution to a conference proceedings

Zirconium dioxide thin films for high-K applications by MOCVD from novel mononuclear precursors

Thomas, R.
2005

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Journal Article

SrTa2O6 thin films for high-K dielectric applications grown by chemical vapor deposition on different substrates

Regnery, S.
2005

Journal of applied physics, 97 (2005) S. 073521

“...Thomas, R....”

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New tailored precursors for the MOCVD of group IVB metal oxides: high-k application

Thomas, R.
2005

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Electrical properties of HfO2/SiOx, HfO2/SiO2 and HfO2/SiON stacks on Si as an alternate high-k gaste oxide material

Thomas, R.
2005

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Journal Article

Comparison of precursors for pulsed metal-organic chemical vapor deposition of HfO2 high-k dielectric thin films

Teren, A. R.
2005

Thin solid films, 478 (2005) S. 206

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Publications database 8 Open Access 2

Journal Article 4 Poster 2 Conference Presentation 1 Contribution to a book 1 Contribution to a conference proceedings 1

Thomas, R. 8 Ehrhart, P. 7 Waser, R. 7 Devi, A. 4 Patil, U. 4 Regnery, S. 3 more ... Bhakta, R. 2 Ding, Y. 1 He, J. 1 Jia, C. L. 1 Mantl, S. 1 Rije, E. 1 Szot, K. 1 Teren, A. R. 1 see all ... less ...

Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik 8

Center of Nanoelectronic Systems for Information Technology; CNI 8 Elektronische Materialien; IFF-IEM 8 Mikrostrukturforschung; IFF-IMF 2 Institut für Halbleiterschichten und Bauelemente; ISG-1 1

2005

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