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1

Journal Article

Reliability analysis of the low resistance state stability of Ge_0.3Se_0.7 based solid electrolyte nonvolatile memory cells

Soni, R.
2009

Applied physics letters, 94 (2009) S. 123503

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2

Journal Article

Separation of bulk and interface contributions to electroforming and resistive switching behavior of epitaxial Fe-doped SrTiO3

Menke, T.
2009

Journal of applied physics, 105 (2009) S. 066104

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3

Journal Article

Mechanism for bipolar switching in a Pt/TiO2/Pt resistive switching cell

Jeong, D. S.
2009

Physical Review B Physical review / B, 79 79 (2009 2009) 19 19, S. 195317 195317

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4

Journal Article

Electrode kinetics of Cu-SiO2-based resistive switching cells: overcoming the voltage-time dilemma of electrochemical metallization memories

Schindler, C.
2009

Applied physics letters, 94 (2009) S. 072109

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5

Journal Article

Impact of the electroforming process on the device stability of epitaxial Fe-doped SrTiO3 resistive switching cells

Menke, T.
2009

Journal of applied physics, 106 (2009) S. 114507

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6

Journal Article

The influence of copper top electrode on the resistive switching effect in TiO2 thin films studied by conductive atomic force microscopy

Yang, Lin.
2009

Applied physics letters, 95 (2009) S. 013109

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