JuLib | Articles & more - {"Afanas'ev, V. V."}

1

Determination of energy thresholds of electron excitations at semiconductor/insulator interfaces using trap-related displacement currents

Afanas'ev, V. V.
2019

Microelectronic engineering, 215 (2019) S. 110992 -

“...Afanas'ev, V. V....”

2

Journal Article

Oxidation-induced electron barrier enhancement at interfaces of Ge-based semiconductors (Ge, Ge$_{1−x}$ Sn$_{x}$ , Si$_{y}$ Ge$_{1−x-y}$ Sn$_{x}$ ) with Al$_{2}$ O$_{3}$

Afanas'ev, V. V.
2017

Microelectronic engineering, 178 (2017) S. 141 - 144

“...Afanas'ev, V. V....”

3

Journal Article

Correlation of Bandgap Reduction with Inversion Response in (Si)GeSn/High-k/Metal Stacks

Schulte-Braucks, C.
2017

ACS applied materials & interfaces, 9 (2017) 10, S. 9102 - 9109

“...Afanas’ev, V. V....”

4

Journal Article

Saturation Photo-Voltage Methodology for Semiconductor/Insulator Interface Trap Spectroscopy

Madia, O.
2016

ECS journal of solid state science and technology, 5 (2016) 4, S. P3031 - P3036

“...Afanas'ev, V. V....”

5

Journal Article

Photoconductivity of Hf-based binary metal oxides

Shamuilia, S.
2008

Journal of applied physics, 104 (2008) S. 114103-1 - 114103-6

“...Afanas'ev, V. V....”
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6

Journal Article

Photoconductivity of Hf-based binary metal oxides

Shamuilia, S.
2008

Microelectronic engineering, 85 (2008) S. 2400 - 2402

“...Afanas'ev, V.V....”

7

Journal Article

Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides: Sc2O3, Lu2O3, LaLuO3

Afanas'ev, V. V.
2007

Microelectronic engineering, 84 (2007) S. 2278 - 2281

“...Afanas'ev, V. V....”

8

Conference Presentation

Amorphous lanthanum lutetium oxide thin films as an alternative high-k gate dielectric

Lopes, J. M. J.
2007

“...Afanas'ev, V. V....”

9

Poster

Rare earth based oxides as alternative gate dielectrics

Roeckerath, M.
2006

“...Afanas'ev, V. V....”

10

Journal Article

Preparation and characterization of rare earth scandates as alternative gate oxide materials

Wagner, M.
2006

Solid state electronics, 50 (2006) S. 58 - 62

“...Afanas'ev, V. V....”

11

Journal Article

Band alignment between (100) Si and amorphous LaAlO3,LaScO3, and Sc2O3: Atomically abrupt versus interlayer-containing interfaces

Afanas'ev, V. V.
2006

Applied physics letters, 88 (2006) S. 032104

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12

Contribution to a book

Rare-Earth Metal Scandate High-k Layers

Zhao, C.
2006

“...Afanas'ev, V. V....”

13

Journal Article

Amorphous lanthanum lutetium oxide thin films as an alternative high-k gate dielectric

Lopes, J. M. J.
2006

Applied physics letters, 89 (2006) S. 222902

“...Afanas'ev, V. V....”
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14

Journal Article

Ternary rare-earth metal oxide high-k layers on silicon oxide

Zhao, C.
2005

Applied physics letters, 86 (2005) S. 132903-1 - 132903-3

“...Afanas'ev, V. V....”
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15

Contribution to a book
Contribution to a conference proceedings

Preparation and characterization of rare earth scandates as alternative gate oxide materials

Wagner, M.
2005

“...Afanas'ev, V. V....”

16

Journal Article

Band alignment between (100)Si and complex rare earth/transition metal oxides

Afanas'ev, V. V.
2004

Applied physics letters, 85 (2004) S. 5917 - 5919

“...Afanas'ev, V. V....”
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