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Journal Article 4 Conference Presentation 2 Talk (non-conference) 2

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Journal Article

Integration of MOSFETs with SiGe dots as stressor material

Nanver, L.K.
2011

Solid state electronics, 60 (2011) S. 75 - 83

“...Nanver, L.K....”

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Journal Article

X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor

Hrauda, N.
2011

Nano letters, 11 (2011) S. 2875 - 2880

“...Nanver, L.K....”

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Journal Article

n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility

Jovanovic, V.
2010

IEEE Electron Device Letters, 31 (2010) S. 1083 - 1085

“...Nanver, L.K....”

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Talk (non-conference)

Investigations on strained Si channels above buried 2D peridoc SiGe islands integrated into a Field-Effect Transistor

Hrauda, N.
2010

“...Nanver, L.K....”

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Conference Presentation

Disposable DotFET: A MOSFET based on locally strained silicon

Moers, J.
2008

“...Nanver, L. K....”

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Conference Presentation

Disposable DotFET: Overlay requirements and the accuracy of E-Beam lithography on structures defined by optical lithography

Moers, J.
2008

“...Nanver, L. K....”

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Journal Article

Annealing experiments on supercritical Si(1-x)Gex layers grown by RPCVD

Grimm, K.
2000

Materials science and engineering / B, 69-70 (2000) S. 261

“...Nanver, L. K....”

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Talk (non-conference)

SiGe island formation by post-growth anneal on supercritical layers grown by RPCVD

Grimm, K.
2000

“...Nanver, L. K....”

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Publications database 8

Journal Article 4 Conference Presentation 2 Talk (non-conference) 2

Grützmacher, Detlev 6 Moers, J. 6 Bauer, G. 4 Biasotto, C. 4 Jovanovic, V. 4 Mussler, G. 4 more ... Nanver, L. K. 4 Nanver, L.K. 4 Gerharz, J. 3 Hrauda, N. 3 Stangl, J. 3 Zhang, J.J. 3 Grimm, K. 2 Lüth, H. 2 Miglio, L. 2 Schmidt, O.G. 2 Vescan, L. 2 Visser, C. C. G. 2 van der Cingel, J. 2 Bonera, E. 1 Carbone, D. 1 Etzelstorfer, T. 1 Holý, V. 1 Kosina, H. 1 Mandl, B. 1 Marzegalli, A. 1 Pezzoli, F. 1 Stoffel, M. 1 Vastola, G. 1 Wintersberger, E. 1 see all ... less ...

Grundlagen für zukünftige Informationstechnologien 6 Halbleiterschichtsysteme und Mesoskopische Strukturen 2

Halbleiter-Nanoelektronik; IBN-1 4 JARA-FIT; JARA-FIT 4 Center of Nanoelectronic Systems for Information Technology; CNI 2 Halbleiter-Nanoelektronik; PGI-9 2 Institut für Schicht- und Ionentechnik; ISI 2

2000 2 2008 2 2010 2 2011 2

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