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MOVPE of Cr-doped GaN with respect to spintronic applications

Hardtdegen, H.
2008

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MOVPE of Cr-doped GaN: growth development and layer characteristics

Hardtdegen, H.
2008

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Current-induced spin polarization (CISP) in GaAs monitored by Faraday microscopy

Schmalbuch, K.
2008

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Pulsed electrical injection of phase-coherent spin packets into semiconductors

Schreiber, L.
2008

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Current pulse induced coherence of spin packets injected across a Fe/GaAs interface

Schwark, C.
2008

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Journal Article

The growth of Cr-doped GaN by MOVPE towards spintronic applications

Cho, Y. S.
2007

Physica status solidi / A, 204 (2007) S. 72 - 77

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The Structural Properties of Cr-doped GaN by MOVPE

Cho, Y. S.
2007

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MOVPE of GaN: Cr for Spintronics

Cho, Y. S.
2007

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Wachstumsuntersuchungen zur Cr-dotierung in GaN für die Spinelektronik

Hardtdegen, H.
2007

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Properties of MOVPE grown (Ga,Cr)N layers for spintronic applications

Kaluza, N.
2007

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Optimization of Cr-doped GaN growth by MOVPE

Cho, Y. S.
2006

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The growth of Cr-doped GaN by MOVPE for spintronics

Cho, Y. S.
2006

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Chromium Doped GaN Layers for Spintronics

Kaluza, N.
2006

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Chromium doped GaN layers for spintronics

Kaluza, N.
2006

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First Growth of Cr-doped GaN Layers by MOVPE for Spintronics

Kaluza, N.
2006

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