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1

Journal Article

Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides: Sc2O3, Lu2O3, LaLuO3

Afanas'ev, V. V.
2007

Microelectronic engineering, 84 (2007) S. 2278 - 2281

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2

Journal Article

Thermal stability of amorphous LaScO3 films on silicon

Edge, L. F.
2006

Applied physics letters, 89 (2006) S. 062902

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3

Journal Article

Electrical characterization of amorphous lanthanum aluminate thin films grown by molecular-beam depostition on silicon

Edge, L. F.
2006

Applied physics letters, 88 (2006) S. 112907

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4

Journal Article

Band alignment between (100) Si and amorphous LaAlO3,LaScO3, and Sc2O3: Atomically abrupt versus interlayer-containing interfaces

Afanas'ev, V. V.
2006

Applied physics letters, 88 (2006) S. 032104

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5

Journal Article

Measurement of the band offsets between amorphous LaAlO3 and silicon

Edge, L. F.
2004

Applied physics letters, 84 (2004) S. 726 - 729

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6

Journal Article

Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon

Edge, L. F.
2004

Applied physics letters, 84 (2004) S. 4629 - 4631

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