JuLib | Articles & more - {"JARA Institut Green IT; PGI-10"}

Ask a Librarian

1

Journal Article

Variability-Aware Modeling of Filamentary Oxide-Based Bipolar Resistive Switching Cells Using SPICE Level Compact Models

Bengel, Christopher
2020

IEEE transactions on circuits and systems / 1 Regular papers, 67 (2020) 12, S. 4618 - 4630

“...JARA Institut Green IT; PGI-10 JARA Institut Green IT...”
OpenAccess

2

Journal Article

Evolution of short-range order in chemically and physically grown thin film bilayer structures for electronic applications

Dippel, Ann-Christin
2020

Nanoscale, 12 (2020) 24, S. 13103 - 13112

“...JARA Institut Green IT; PGI-10 JARA Institut Green IT...”
Restricted Published on 2020-06-16. Available in OpenAccess from 2021-06-16. Published on 2020-06-16. Available in OpenAccess from 2021-06-16. Restricted Published on 2020-06-16. Available in OpenAccess from 2021-06-16. Published on 2020-06-16. Available in OpenAccess from 2021-06-16.

3

Journal Article

Cation diffusion in polycrystalline thin films of monoclinic HfO 2 deposited by atomic layer deposition

Mueller, Michael P.
2020

APL materials, 8 (2020) 8, S. 081104 -

“...JARA Institut Green IT; PGI-10 JARA Institut Green IT...”
OpenAccess OpenAccess

4

Talk (non-conference)

Stable redox-based resistive switching non-volatile memories (ReRAM) from ultrathin metal oxide layers for next generation neuromorphic computation

Aussen, Stephan
2020

“...JARA Institut Green IT; PGI-10 JARA Institut Green IT...”

5

Conference Presentation

Bipolar analogue memristive function for neuromorphic computing enabled by stack design of HfO2-based ReRAM devices

Cüppers, Felix
2019

“...JARA Institut Green IT; PGI-10 JARA Institut Green IT...”

6

Journal Article

Exploiting the switching dynamics of HfO2/TiOx-based ReRAM devices for reliable analogue memristive behaviour

Cüppers, Felix
2019

APL materials, 7 (2019) S. 091105

“...JARA Institut Green IT; PGI-10 JARA Institut Green IT...”
Get full text OpenAccess Get full text OpenAccess

7

Conference Presentation

Memristive Devices Formed By ALD Metal Oxide Growth on a Hafnium Layer – Study of the Interfacial HfO2 Formation

Aussen, Stephan
2019

“...JARA Institut Green IT; PGI-10 JARA Institut Green IT...”

8

HfO2/TiO2 Memristive Devices as Synapses in Future Artificial Neural Networks

Cüppers, Felix
2019

“...JARA Institut Green IT; PGI-10 JARA Institut Green IT...”

9

Conference Presentation

Evaluation of the switching dynamics of HfO2/TiOx ReRAM devices for reliable analog memristive behavior

Hoffmann-Eifert, Susanne
2019

“...JARA Institut Green IT; PGI-10 JARA Institut Green IT...”

10

Journal Article

Improved Switching Stability and the Effect of an Internal Series Resistor in HfO 2 /TiO x Bilayer ReRAM Cells

Hardtdegen, Alexander
2018

IEEE transactions on electron devices, 65 (2018) 8, S. 3229 - 3236

“...JARA Institut Green IT; PGI-10 JARA Institut Green IT...”

11

Gradual SET and gradual RESET behaviour for HfO2/TiOx bilayer ReRAM cells

Hardtdegen, Alexander
2018

“...JARA Institut Green IT; PGI-10 JARA Institut Green IT...”

12

Conference Presentation

Characterization of HfO2/TiOx bilayer ReRAM Cells in Pulse Operation Mode

Hardtdegen, Alexander
2018

“...JARA Institut Green IT; PGI-10 JARA Institut Green IT...”

13

HfO2/TiO2 Memristive Devices as Synapses in Future Artificial Neural Networks

Cüppers, Felix
2018

“...JARA Institut Green IT; PGI-10 JARA Institut Green IT...”

14

Comparison of plasma-enhanced and thermal atomic layer deposited TiO2 for the integration into HfO2/TiO2-based resistive switching devices

Hardtdegen, Alexander
2017

“...JARA Institut Green IT; PGI-10 JARA Institut Green IT...”

15

Interfacial metal oxide formation during ALD oxide growth on reactive metals for resistive switches

Aussen, Stephan
2017

“...JARA Institut Green IT; PGI-10 JARA Institut Green IT...”

16

Conference Presentation

Tuning the Switching Behavior of Nano-Crossbar Reram Devices By Design and Process Treatment of ALD Functional Oxide Layer Stacks

Hoffmann-Eifert, Susanne
2017

“...JARA Institut Green IT; PGI-10 JARA Institut Green IT...”

17

Conference Presentation

Interfaces formed by ALD metal oxide growth on metal layers

Aussen, Stephan
2017

“...JARA Institut Green IT; PGI-10 JARA Institut Green IT...”

18

Contribution to a book

Tuning the Performance of Pt/HfO2/Ti/Pt ReRAM Devices Obtained from Plasma-Enhanced Atomic Layer Deposition for HfO2 Thin Films

Hardtdegen, A.
2016

“...JARA Institut Green IT; PGI-10 JARA Institut Green IT...”

19

Conference Presentation

Lowering Forming Voltage and Forming-Free Behavior of Ta2O5 ReRAM Devices

Kim, Wonjoo
2016

“...JARA Institut Green IT; PGI-10 JARA Institut Green IT...”

20

Internal Cell Resistance as the Origin of Abrupt Reset Behavior in HfO2-Based Devices Determined from Current Compliance Series

Hardtdegen, Alexander
2016

“...JARA Institut Green IT; PGI-10 JARA Institut Green IT...”

Select all titles on this page

1
2
Next
[2]