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Journal Article
3
Talk (non-conference)
2
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Select result number 1
1
Journal Article
Integration of MOSFETs with SiGe dots as stressor material
Nanver, L.K.
2011
Solid state electronics, 60 (2011) S. 75 - 83
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Jovanovic
,
V
....
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2
Journal Article
X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor
Hrauda, N.
2011
Nano letters, 11 (2011) S. 2875 - 2880
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Jovanovic
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3
Talk (non-conference)
Investigations on strained Si channels above buried 2D peridoc SiGe islands integrated into a Field-Effect Transistor
Hrauda, N.
2010
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Jovanovic
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4
Talk (non-conference)
Dot-Field Effect Transistor: Using locally strained silicon for MOSFET applications
Moers, J.
2010
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5
Journal Article
n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility
Jovanovic
,
V
.
2010
IEEE Electron Device Letters, 31 (2010) S. 1083 - 1085
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Collection
Publications database
5
Document Type
Journal Article
3
Talk (non-conference)
2
Name
Biasotto, C.
5
Grützmacher, Detlev
5
Jovanovic, V.
5
Moers, J.
5
Bauer, G.
4
Nanver, L.K.
4
more ...
Hrauda, N.
3
Mussler, G.
3
Stangl, J.
3
Zhang, J.J.
3
Gerharz, J.
2
Miglio, L.
2
Schmidt, O.G.
2
van der Cingel, J.
2
Bonera, E.
1
Carbone, D.
1
Etzelstorfer, T.
1
Holý, V.
1
Kosina, H.
1
Mandl, B.
1
Marzegalli, A.
1
Nanver, L.
1
Pezzoli, F.
1
Stoffel, M.
1
Vastola, G.
1
Wintersberger, E.
1
Zhang, J.
1
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Research Program
Grundlagen für zukünftige Informationstechnologien
5
Contributing Institute
JARA-FIT; JARA-FIT
5
Halbleiter-Nanoelektronik; IBN-1
3
Halbleiter-Nanoelektronik; PGI-9
2
Scientific Report
2010
3
2011
2
Year of Publication
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