JuLib | Articles & more - {"Lupták, R."}

1

Journal Article

LaLuO3 higher-k dielectric integration in SOI MOSFETs with a gate-first process

Nichau, A.
2012

Solid state electronics, 71 (2012) S. 19 - 24

“...Luptak, R....”

2

Poster

Using ALD and AVD-techniques for scaled gate stacks

Schäfer, A.
2012

“...Lupták, R....”

3

Journal Article

Omega-Gated Silicon and Strained Silicon Nanowire Array Tunneling FETs

Richter, S.
2012

IEEE electron device letters, 33 (2012) 11, S. 1535 - 1537

“...Luptak, R....”

4

Journal Article

Impact of strain and Ge concentration on the performance pf planar SiGe band-to-band-tunneling transistors

Schmidt, M.
2012

Solid state electronics, 71 (2012) S. 42 - 47

“...Lupták, R....”

5

Journal Article

20 nm Gate length Schottky MOSFETs with ultra-thin NiSi/epitaxial NiSi2 source/drain

Knoll, L.
2012

Solid state electronics, 71 (2012) S. 88 - 92

“...Lupták, R....”

6

Journal Article

Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source

Zhao, Q.T.
2012

Solid state electronics, 74 (2012) S. 97-101

“...Lupták, R....”

7

Journal Article

Hole Mobilities of Si/Si0.5Ge0.5 Quantum-Well Transistor on SOI and Strained SOI

Yu, W.
2012

IEEE electron device letters, 33 (2012) S. 758 - 760

“...Lupták, R....”

8

Contribution to a book

Electrical and structural properties of ternary rare-earth oxides on Si and higher mobility substrates and their integration as high-k gate dielectrics in MOSFET devices

Lopes, J.M.J.
2011

“...Luptak, R....”

9

Journal Article

Structural and Electrical Properties of Lanthanum Gadolinium Oxide: Ceramic and Thin Films for High-k Application

Pavunny, S.P.
2011

Integrated ferroelectrics, 125 (2011) S. 44 - 52

“...Luptak, R....”

10

Journal Article

Atomic layer deposition of HfO2 and Al2O3 layers on 300 mm Si wafers for gate stack technology

Lupták, R.
2011

Journal of vacuum science & technology / B, 29 (2011) S. 01A301

“...Lupták, R....”

11

Journal Article

Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors

Durgun Özben, E.
2011

Journal of vacuum science & technology / B, 29 (2011) S. 01A903

“...Lupták, R....”

12

Journal Article

LaScO3 as higher-k dielectric for p-MOSFETs

Durgun Özben, E.
2011

Microelectronic engineering, 88 (2011) S. 1323 - 1325

“...Lupták, R....”

13

Conference Presentation

20nm gate length Schottky MOSFETs with ultra thin NiSi/epitaxial NiSi2 source/drain

Knoll, L.
2011

“...Luptak, R....”

14

Conference Presentation

Lanthanum Lutetium oxide integration in a gate-first process on SOI MOSFETs

Nichau, A.
2011

“...Luptak, R....”

15

Conference Presentation

Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors

Schmidt, M.
2011

“...Luptak, R....”

16

Contribution to a book
Contribution to a conference proceedings

20nm gate length Schottky MOSFETs with ultra thin NiSi/epitaxial NiSi2 source/drain

Knoll, L.
2011

“...Luptak, R....”

17

Journal Article

High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate

Yu, W.
2011

Solid state electronics, 62 (2011) 1, S. 185 - 188

“...Lupták, R....”

18

Conference Presentation

Tunneling Field-Effect Transistor with a Strained Si Channel and a Si0.5Ge0.5 Source

Zhao, Q.T.
2011

“...Luptak, R....”

19

Contribution to a book
Contribution to a conference proceedings

Tunneling Field-Effect Transistor with a Strained Si Channel and a Si0.5Ge0.5 Source

Zhao, Q.T.
2011

“...Luptak, R....”

20

Contribution to a book
Contribution to a conference proceedings

Lanthanum Lutetium oxide integration in a gate-first process on SOI MOSFETs

Nichau, A.
2011

“...Luptak, R....”

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