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1

Journal Article

Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal-polar GaN/AlInGaN interfaces

Reuters, B.
2014

Journal of physics / D, 47 (2014) 17, S. 175103

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2

Journal Article

p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers

Hahn, Herwig
2013

IEEE transactions on electron devices, 60 (2013) 10, S. 3005 - 3011

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3

Journal Article

AlGaN/GaN heterostructure field-effect transistors regrown on nitrogen implanted templates

Witte, W
2013

Semiconductor science and technology, 28 (2013) 8, S. 085006 -

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4

Journal Article

Polarization-reduced quaternary InAlGaN/GaN HFET and MISHFET devices

Ketteniss, N.
2012

Semiconductor science and technology, 27 (2012) S. 055012

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