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1
Journal Article
Technology and performance of 150 nm gate lenghth InGaP/InGaAs HEMT
Lalinsky, T.
2001
Vacuum, 61 (2001) S. 323
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Tomaska
,
M
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2
Conference Presentation
Technology and performance of 150 nm gate length InGaP/InGaAs/GaAs HEMT
Lalinsky, T.
2000
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...
Tomaska
,
M
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3
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Microwave properties of 2-DEG MSM photodetectors
Tomaska
,
M
.
1999
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Tomaska
,
M
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4
Conference Presentation
Microwave properties of 2-DEG MSM photodetectors
Tomaska
,
M
.
1999
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...
Tomaska
,
M
....
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4
Document Type
Conference Presentation
2
Contribution to a book
1
Contribution to a conference proceedings
1
Journal Article
1
Name
Fox, P. T.
4
Kordos, P.
4
Tomaska, M.
4
Hasenöhrl, S.
2
Kuzmik, J.
2
Lalinsky, T.
2
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Marso, M. A.
2
Mozolova, Z.
2
Skriniarova, J.
2
Kovacik, T.
1
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Research Program
Halbleiterbauelemente und Analytik
2
ohne FE
2
Contributing Institute
Institut für Schicht- und Ionentechnik; ISI
3
Institut für Halbleiterschichten und Bauelemente; ISG-1
1
Scientific Report
1999
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2000
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2001
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