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181

Properties of the two-dimensional electron gas in modulation-doped Galn As(P)/InP structures grown by low-pressure metalorganic vapor-phase epitaxy

Koch, F.
1989

Journal of applied physics, 66 2, S. 697-703

OpenAccess

182

Journal Article

Electronic structure of Sb overlayers on GaAs(110)

Lüth, H.
1986

OpenAccess

183

Journal Article

Inelastic scattering of low-energy electrons frorn Sn overlayers on cleaved InSb(110) surfaces

Lüth, H.
1985

OpenAccess

184

Journal Article

Electronic structure of cleaved clean and oxygen-covered GaAs (110) surfaces

Matz, R.
1977

OpenAccess

185

Journal Article

Electronic surface and bulk transitions on clean Zn0 surfaces studied by electron energy-loss spectroscopy

Büchel, M.
1977

OpenAccess

186

Journal Article

Single and multiple excitation of bulk and surface plasmons on clean ZnO surfaces

Lüth, H.
1976

OpenAccess

187

Journal Article

Adsorption of oxygen on clean cleaved (110) gallium-arsenide surfaces

Russell, G. J.
1974

OpenAccess

188

Journal Article

Porosity superlattices: a new class of Si heterostructures

Grosse, P.

Journal of physics / D, 27 (1994) S. 1333 - 1336

OpenAccess

189

Journal Article

Magnetotransport and photoluminescence of two-dimensional hole gases in Si/Sil -, Ge, /Si heterostructures

Stoica, T.

Physical review / B, 50 (1994) 24, S. 18113 - 18123

OpenAccess

190

Journal Article

A Raman study of Au/Te/Au/GaAs (100) ohmic contacts

Silverans, R. E.

Journal of applied physics, 71 (1992) 2, S. 739 - 743

OpenAccess

191

Journal Article

Identification of the Ohmic-contact formation mechanism in the Au/Te/Au/GaAs system

Van Rossum, M.

Physical review / B, 45 (1992) 20, S. 11863 - 11875

OpenAccess

192

Journal Article

Optimization of modulation-doped Ga1- xInxAs/lnP heterostructures towards extremely high mobilities

Jäger, W.

Journal of applied physics, 73 (1993) 9, S. 4489 - 4493

OpenAccess

193

Journal Article

Optical and structural investigation of SiGe/Si quantum wells

Jäger, W.

Applied physics letters, 60 (1992) 18, S. 2183 - 2185

OpenAccess

194

Journal Article

Gas source molecular beam epitaxy of FeSi2/Si(l 11) heterostructures

Gerthsen, D.

Applied physics letters, 62 (1992) 18, S. 2271 - 2273

OpenAccess

195

Journal Article

The effect of growth temperature on AlAs/GaAs resonant tunnelling diodes

Lüth, H.

Journal of physics / D, 27 (1994) S. 175 - 178

OpenAccess

196

Journal Article

Properties of the two-dimensional electron gas in modulation-doped Galn As(P)/InP structures grown by low-pressure metalorganic vapor-phase epitaxy

Koch, F.

Journal of applied physics, 66 (1989) S. 697 - 703

OpenAccess

197

Journal Article

Line-shape model for the broad photoluminescence band from Si1-xGex/Si heterostructures

Lüth, H.

Physical review / B, 48 (1993) 24, S. 18276 - 18279

OpenAccess

198

Journal Article

Te doping of GaAs using diethyl-tellurium

Lüth, H.

Journal of applied physics, 76 (1994) 3, S. 1974 - 1976

OpenAccess

199

Journal Article

Low- and high-field transport properties of pseudomorphic InxGa1-xAs/lnP (0.73 kleiner gleich x kleiner gleich 0.82) p-type modulation-doped single-quantum-well structures

Lüth, H.

Journal of applied physics, 75 (1994) 7, S. 3507 - 3515

OpenAccess

200

Journal Article

Determination of the valence band offset of Si/Si0.7Ge0.3/Si quantum wells using deep level transient spectroscopy

Lüth, H.

Journal of applied physics, 73 (1993) 11, S. 7427 - 7430

OpenAccess

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