Silicon. Supplement B5C. Silicon nitride in microelectronics and solar cells.
silicon nitride application to microelectronics and solar cells :
Saved in:
Personal Name(s): | Pebler, A., editor |
---|---|
Krimmel, Eberhard F., Mitarb. | |
Imprint: |
Berlin :
Springer,
1991.
|
Physical Description: |
XV, 400 S. |
Note: |
englisch |
ISBN: |
9780387936307 3540936300 0387936300 9783540936305 |
Series Title: |
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Gmelin handbook of inorganic and organometallic chemistry ;
SI,Suppl.B5C. |
Subject (ZB): | |
Classification: | |
Shelf Classification: |
LEADER | 02347cam a2200577 n 4500 | ||
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001 | 133392 | ||
005 | 20030214084800.0 | ||
008 | r1991 | ||
020 | |a 3540936300 | ||
020 | |a 0387936300 | ||
035 | |a (Sirsi) a118517 | ||
084 | 0 | |a CBA - Gmelin handbook |2 ZB | |
084 | 0 | |a FGM - Microelectronic technology |2 ZB | |
084 | 0 | |a FJL - Physics of solid state devices |2 ZB | |
084 | 0 | |a EISF - Thin film solar cells |2 ZB | |
084 | 1 | |a CBA - Gmelin Handbuch |2 LS | |
245 | 0 | 0 | |a Silicon. |n Supplement B5C. |p Silicon nitride in microelectronics and solar cells. |
260 | |a Berlin : |b Springer, |c 1991. | ||
300 | |a XV, 400 S. | ||
490 | 0 | |a Gmelin handbook of inorganic and organometallic chemistry ; |v SI,Suppl.B5C. | |
500 | |a englisch | ||
520 | |a silicon nitride application to microelectronics and solar cells : | ||
520 | |a preparation and patterning of layers and films | ||
520 | |a application as lithographic projection masks and monolithic masks | ||
520 | |a application for protecting and passivating devices | ||
520 | |a encapsulating and recrystallization | ||
520 | |a application for the manufacture of contacts and interconnections | ||
520 | |a application to isolating devices and device components | ||
520 | |a dielectrics and masks in capacitors, field effect devices and thin film devices | ||
520 | |a charge coupled devices, schottky diodes | ||
520 | |a bipolar devices (diodes, transistors, thyristors) | ||
520 | |a integrated circuit technology | ||
520 | |a field effect transistor- based and bipolar device- based integrated circuits | ||
520 | |a random access memories, read only memories | ||
520 | |a compound semiconductor field effect transistors | ||
520 | |a light emitting diodes, lasers and displays | ||
520 | |a photoelectric devices | ||
520 | |a epitaxy and superlattices | ||
520 | |a application to solar cells | ||
596 | |a 1 | ||
650 | 4 | |a silicon | |
650 | 4 | |a nitride | |
650 | 4 | |a application | |
650 | 4 | |a microelectronics | |
650 | 4 | |a solar cell | |
700 | 1 | |a Pebler, A., |e Hrsg. | |
700 | 1 | |a Krimmel, Eberhard F., |e Mitarb. | |
900 | |a B 000361'08'-SI,SUPPL.B5C | ||
900 | |a CBA SI,S.B5C | ||
908 | |a Handbuch | ||
949 | |a CBA SI,S.B5C |w LC |c 1 |i 1091105421 |d 10/9/1997 |l REFERENCE |m ZB |r Y |s Y |t PR |u 25/3/2009 |x ZB-C |1 PRINT |2 HB |