This title appears in the Scientific Report :
2010
Investigations on strained Si channels above buried 2D peridoc SiGe islands integrated into a Field-Effect Transistor
Investigations on strained Si channels above buried 2D peridoc SiGe islands integrated into a Field-Effect Transistor
Saved in:
Personal Name(s): | Hrauda, N. |
---|---|
Zhang, J.J. / Stangl, J. / Bauer, G. / Biasotto, C. / Jovanovic, V. / Nanver, L.K. / Moers, J. / Grützmacher, D. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT |
Published in: |
8th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces |
Imprint: |
2010
|
Conference: | Como, Italy 2010-06-14 |
Document Type: |
Talk (non-conference) |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Publikationsportal JuSER |
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245 | |a Investigations on strained Si channels above buried 2D peridoc SiGe islands integrated into a Field-Effect Transistor | ||
260 | |c 2010 | ||
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