This title appears in the Scientific Report :
2008
Leakage current in high-k materials for DRAM application - thickness dependence revisited
Leakage current in high-k materials for DRAM application - thickness dependence revisited
Saved in:
Personal Name(s): | Schroeder, H. |
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Contributing Institute: |
Center of Nanoelectronic Systems for Information Technology; CNI Elektronische Materialien; IFF-6 |
Published in: |
Materials Research Society Spring Meeting |
Imprint: |
2008
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Conference: | San Francisco, CA 2008-03-24 |
Document Type: |
Poster |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Publikationsportal JuSER |
Description not available. |